High Speed Switching Devices in 4H-SiC - Performance and Reliability

Ryu, Sei-Hyung; Krishnaswami, Sumi; Hull, Brett; Heath, Bradley; Das, Mrinal K.; Richmond, Jim; Husna, Fatima; Zhang, J.; Agarwal, Anant; Palmour, John W.; Lelis, A.; Geil, Bruce; Katsis, Dimos; Scozzie, Charles; Scofield, James D.

doi:10.1109/isdrs.2005.1596032

Cited by 5 publications

(5 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Despite certain efforts through the decades that followed, research on SiC began to flourish by the end of the 20th century. The progress in the fabrication of high-quality 4H-SiC wafers has enabled remarkable 4H-SiC-based device applications: power electronics [ 8 , 9 ], quantum sensing [ 10 , 11 , 12 ], and radiation detection [ 14 , 15 , 16 , 17 , 18 , 19 ]. This has influenced the significant increase in the market value.…”

Section: 4h-sicmentioning

confidence: 99%

“…Figure 1 shows several areas where WBG semiconductors are used. Due to the material properties ( Table 1 ), WBG semiconductors are dominantly used for applications in power electronics [ 7 , 8 , 9 ]. However, the number of new applications is continuously increasing, and WBG semiconductors are becoming the material of special interest for quantum technology [ 10 , 11 , 12 ], gas sensing [ 13 ], and radiation detection [ 14 , 15 , 16 , 17 , 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

View full text Add to dashboard Cite

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

show abstract

Section: 4h-sicmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

View full text Add to dashboard Cite

show abstract

“…Despite certain efforts through the decades that followed, research on SiC began to flourish by the end of the 20th century. The progress in the fabrication of high-quality 4H-SiC wafers has enabled remarkable 4H-SiC-based device applications: power electronics [8,9], quantum sensing [10,11,12] and radiation detection [13,14,15,16,17,18]. This has influenced the significant increase in the market value.…”

Section: H-sicmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan¹

2022

Preprint

View full text Add to dashboard Cite

In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. Main achievements are highlighted, and main challenges are discussed.

show abstract

“…Silicon-carbide (SiC) power electronic devices offer higher temperature operation, higher breakdown voltage limits, and lower losses than their Si counterparts [1]. These features provide critical performance benefits for power electronic systems, especially those of the automotive sector where higher temperature and more compact operating environments are common.…”

Section: Introductionmentioning

confidence: 99%

Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Urciuoli

Green

Lelis

et al. 2010

2010 IEEE Energy Conversion Congress and Exposition

View full text Add to dashboard Cite

A dual 1200 V, 400 A power module was built in a half-bridge configuration using 16 silicon-carbide (SiC) 0.56 cm 2 DMOSFET die and 12 SiC 0.48 cm 2 JBS diode die. The module included high temperature custom packaging and an integrated liquid cooled heat sink while conforming to the footprint and pinout of a commercial dual IGBT package. Die encapsulant was not used, to allow data collection by infrared thermal imaging. The module was DC tested at currents up to 400 A and coolant temperatures up to 100 ˚C. Switching was evaluated in a boost converter at load power levels up to 25 kW and at frequencies up to 30 kHz with coolant temperatures up to 80 ˚C. Acceptable current sharing between MOSFET die was observed over the switching frequency and coolant temperature ranges. Package thermal resistances and MOSFET and diode power losses were characterized. Results were compared to those simulated for a 400 A IGBT module.

show abstract

High Speed Switching Devices in 4H-SiC - Performance and Reliability

Cited by 5 publications

References 2 publications

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Wide-Bandgap Semiconductors for Radiation Detection: A Review

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Contact Info

Product

Resources

About