Wide-Bandgap Semiconductors for Radiation Detection: A Review

Abstract

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

“…According to the Tauc Plot method, we determine that the deposited pure SiC and 8.0 at% In-doped SiC thin films exhibit the approximate bandgaps of 3.27 eV and 3.856 eV, as Figure 7a,b show. The Eg value of SiC thin film is about 3.3 eV [22] and the Eg value of In2O3 thin film is about 3.5 eV [23]. The higher bandgap of In-doped SiC thin films compared to that of In2O3 and SiC thin films may be attributed to the differences in the crystal structure and composition of the materials.…”

“…According to the Tauc Plot method, we determine that the deposited pure SiC and 8.0 at% In-doped SiC thin films exhibit the approximate bandgaps of 3.27 eV and 3.856 eV, as Figure7a,b show. The Eg value of SiC thin film is about 3.3 eV[22] and the Eg value of In 2 O 3 thin film is about 3.5 eV[23].…”