5kV high power full SIC module technology was developed and 1.6kV 40A SIJFET module was fabricated for tbe first time, which is the pressure contact flat package type and includes four 6mm I 6mm SIC SIJFETs in addition to one 6mm I 6" SIC fly wheeling pn diode. SIC SIJFET operates as tbe blpolar transistor and its current gain ranges from 10 to 4000. Its turnon time and turn-off tlme are 360ns and 109 ns respectively. Since the SIJFET module has not only high current gains but also high switching speeds, It is suitable for the low loss power conversion eircults.
L INTRODUCIIONSic power semiconductor devices are expected to enable superior performances to that of Si devices due to Sic's excellent electrical and physical pmperties.Recently, some Sic transistors have been developed, which demonshated that Sic transistors have drastically reduced RonS far less than the Si theoretical limits and have bcm ideal for mupact low loss high voltage inverters [I -51. But, their cumnt cap&lities are inadequate for use in industrial applications and electricity supplies because d the s d l chip area, due to nunemus aysal d e w such as miuqipes.In order to solve the limited chip size problem, we proposed a pressure contact flat package type SIC module in ISPSD'98 161, and presented a 3.lkV 600A high temperature diode module with high pfh" inspsD '02, fcathefirst ti me [n.In this paper, a high power full Sic switching device module is reported for the first time, which includes not only a Sic &ee wheciing diode hut also four Sic SJJFETs (Static induction carrier Injected JFETS).
SiC materials and device technology has entered a new era with the commercialization and acceptance of 600 V/10 A and 1200 V/10 A Schottky Barrier Diodes (SBDs) in the marketplace. These diodes are finding applications in the Power Factor Correction (PFC) stage of Switch Mode Power Supplies (SMPS). SiC power MOSFETs with ratings of 800-1200 V up to 10 A will soon be commercially available. The next step is to integrate the SiC MOSFET and Schottky diodes in a power module for PFC and motor control applications. For high temperature applications, greater than 2000C, a bipolar switch such as a SiC BJT offers superior performance over the MOSFETs. The lack of gate oxide in the BJT offers better reliability at such extreme temperatures, in addition to the lowest combined switching and conduction losses.
INTRODUCTIONSiC offers an opportunity to replace Si PiN diodes and IGBTs with SiC Schottky diodes and MOSFETs, respectively, up to about 3000 V. The combination of SiC Schottky diode and MOSFET will save approximately 60-80% of switching losses resulting in an efficiency improvement of 4-6% points in a typical power electronic system. In addition, cooling requirements will be substantially reduced in direct proportion to the reduction in losses. SiC MOSFET can operate reliably up to junction temperatures of
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.