Framework Release 3.0 Background Since the release of the last edition of the NIST Smart Grid Framework and Roadmap for Interoperability Standards (Release 2.0), 1 in February 2012, significant technological advances in smart grid infrastructure have been implemented, supported by standards development across the entire smart grid arena. Examples include widespread deployment of wirelesscommunication power meters, availability of customer energy usage data through the Green Button initiative, remote sensing for determining real-time transmission and distribution status, and protocols for electric vehicle charging. The first release of the NIST Framework and Roadmap for Smart Grid Interoperability Standards (Release 1.0) 2 was published in January 2010. Release 3.0 updates NIST's ongoing efforts to facilitate and coordinate smart grid interoperability standards development and smart grid-related measurement science and technology, including the evolving and continuing NIST relationship with the Smart Grid Interoperability Panel (SGIP) public-private partnership. Over the last decade, Congress and the Administration have outlined a vision for the smart grid and have laid the policy foundation upon which it is being built. The Energy Independence and Security Act of 2007 (EISA) codified the policy of the United States to modernize the nation's electricity transmission and distribution system to create a smart electric grid. 3 The American Recovery and Reinvestment Act of 2009 (ARRA) accelerated the development of smart grid technologies, investing $4.5 billion for electricity delivery and energy reliability activities to modernize the electric grid and implement demonstration and deployment programs (as authorized under Title XIII of EISA). 4 5 The president, in his 2011 and 2012 State of the Union Addresses, reiterated his vision for a clean energy economy, 6 and he underscored the Administration's commitment in the "Blueprint for a Secure Energy Future." 7
A physics-based IGBT model is implemented into the general purpose circuit simulator SaberTM. The IGBT model includes all of the physical effects that have been shown to be important for describing IGBT's, and the model is valid for general external circuit conditions. The Saber IGBT model is evaluated for the range of static and dynamic conditions in which the device is intended to be operated, and the simulations compare well with experimental results for all of the conditions Base-collector voltage (V). Collector-emitter voltage (V). External feedback capacitor voltage (V). Drain-gate voltage (V). Drain-source voltage (V).
A monolithic CMOS microhotplate-based conductance-type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures that serve as sensing film platforms. The thermal properties of the microhotplates include a 1-ms thermal time constant and a 10 C mW thermal efficiency. The polysilicon used for the microhotplate heater exhibits a temperature coefficient of resistance of 1.067 10 3 C. Tin(IV) oxide and titanium(IV) oxide (SnO 2 TiO 2) sensing films are grown over postpatterned gold sensing electrodes on the microhotplate using low-pressure chemical vapor deposition (LPCVD). An array of microhotplate gas sensors with different sensing film properties is fabricated by using a different temperature for each microhotplate during the LPCVD film growth process. Interface circuits are designed and implemented monolithically with the array of microhotplate gas sensors. Bipolar transistors are found to be a good choice for the heater drivers, and MOSFET switches are suitable for addressing the sensing films. An on-chip operational amplifier improves the signal-to-noise ratio and produces a robust output signal. Isothermal responses demonstrate the ability of the sensors to detect different gas molecules over a wide range of concentrations including detection below 100 nanomoles/mole. I. INTRODUCTION C HEMICAL microsensors represent one important application for microelectromechanical systems (MEMS) technology. Microhotplate devices belong to the MEMS family and can be fabricated in commercial CMOS technology using micromachining techniques [1]. Thermally isolated microhotplate structures can be utilized for conductance-type gas sensing [2] or as microscopic infrared sources [3]. The CMOS compatible process realizes a class of devices that are based on thermo-electromechanical effects and are compatible with existing very-large-scale-integration (VLSI) circuit design techniques [4]-[6]. In this paper, a monolithic integration of a gas sensor system based on CMOS-compatible microhotplate technology is presented. There are numerous applications avail-Manuscript
The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power converter efficiency and electromagnetic interference (EMI). It is shown that a newly developed 1500-V SiC merged PiN Schottky (MPS) diode has significant performance advantages over Si diodes optimized for various voltages in the range of 600 V through 1500 V. It is also shown that a newly developed 5000 V SiC PiN diode has significant performance advantages over Si diodes optimized for various voltages in the range of 2000 V through 5000 V. In a test case power converter, replacing the best 600 V Si diodes available with the 1500 V SiC MPS diode results in an increase of power supply efficiency from 82% to 88% for switching at 186 kHz, and a reduction in EMI emissions.
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