We present a blue InGaN research and development superluminescent light-emitting diode (SLED) that is suitable for picoprojection. The SLED reaches an output power of >100 mW with a peak wavelength of 443 nm and a spectral bandwidth of >2.6 nm as well as a single-mode far-field driven in cw mode at 25 °C. In order to figure out an optimized waveguide design, which enables such a high output power at lowest operation current, we compare the performance of diodes with curved and tilted shaped ridges in detail, using the lasing threshold current as a criterion for lasing or superluminescence, respectively.

Catastrophic optical damage (COD) in 450 nm emitting InGaN/GaN diode lasers is artificially provoked by applying single sub-microsecond current pulses of increasing amplitude. Studying a batch of devices in which COD does not represent the main degradation mode, we find that COD is a 'hot' process. It becomes re-ignited in subsequent pulses. During the process, the spatial filamentation changes abruptly and the outer appearance of the damage pattern is predominantly created within the initial pulse. The process can cause material ejection out of the front facet as shown by thermography.

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