Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection

Kopp, F.; Eichler, Christoph; Lell, A.; Tautz, Soenke; Ristić, Jelena; Stojetz, Bernhard; Höss, C; Weig, Thomas; Schwarz, Ulrich; Strauß, Uwe

doi:10.7567/jjap.52.08jh07

Cited by 39 publications

(24 citation statements)

References 20 publications

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“…In parallel, highly directional beam (limited etendue) with high power, low speckle noise and droop-free can be achieved [19]. Conventionally, SLD is used in optical coherence tomography (OCT) [20], fiber gyroscope [21], sensing [22], and picoprojections [23]. Our previous works reported the fabrication of semipolar InGaN-based SLDs and the potential for white light generation with a CRI of 68.9 [19] and for data communications [24,25] However, the limited availability and high-cost of semipolar GaN substrate present significant challenges in eventual foundry adoption.…”

Section: Introductionmentioning

confidence: 99%

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

Alatawi¹,

Holguín‐Lerma²,

Kang³

et al. 2018

Opt. Express

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We demonstrated a high-power (474 mW) blue superluminescent diode (SLD) on c-plane GaN-substrate for speckle-free solid-state lighting (SSL), and high-speed visible light communication (VLC) link. The device, emitting at 442 nm, showed a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. By integrating a YAG-phosphor-plate to the SLD, a CRI of 85.1 and CCT of 3392 K were measured, thus suitable for solid-state lighting. The SLD shows a relatively large 3-dB modulation bandwidth of >400 MHz, while a record high data rate of 1.45 Gigabit-per-second (Gbps) link has been achieved below forward-error correction (FEC) limit under non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Our results suggest that SLD is a promising alternative for simultaneous speckle-free white lighting and Gbps data communication dual functionalities.

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Section: Introductionmentioning

confidence: 99%

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

Alatawi¹,

Holguín‐Lerma²,

Kang³

et al. 2018

Opt. Express

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“…Table 1 summarizes the design and performance of the demonstrated GaN-based SLDs, comparing the emission wavelength, substrate material, configuration, waveguide design, and the maximum light output power reported in each case. 405 nm c-GaN "j-shape" waveguide curved ridge 350 mW (cw) [24] 408 nm c-GaN "j-shape" waveguide "j-shape" ridge 200 mW (cw) [25] 410 ~ 445 nm c-GaN tilted waveguide 2 µm ridge 30 ~ 55 mW (cw) [26] 420 nm c-GaN tilted facet 2 µm ridge 2 mW (cw) 100 mW (pulse) [27] 420 nm c-GaN "j-shape" waveguide AR/HR coating 3 µm ridge 200 mW (cw) [28] 439 nm m-GaN facet roughening 4 µm ridge 5 mW (pulse) [29] 443 nm c-GaN curved waveguide 2 µm ridge 100 mW (cw) [30] 445 nm c-GaN oblique facet 5 µm ridge - [31] 447 nm Semipolar GaN passive absorber 7.5 µm ridge 256 mW (cw) [17] 500 nm c-GaN curved waveguide 2 µm ridge 4 mW (pulse) [32] Since most of InGaN/GaN QW SLDs are grown on a polar, c-plane GaN substrate, there is a growing interest to develop high efficient violet-blue SLDs on nonpolar or semipolar substrates owing to a reduced polarization field presented in the QW structure [2]. Studies on semipolar and nonpolar GaN-based LEDs and LDs have revealed that the enhanced electron and hole wavefunction overlap is expected for InGaN/GaN QWs grown on nonpolar (m-plane) and semipolar GaN substrates, leading to an enhanced internal quantum efficiency [2,3].…”

Section: Introductionmentioning

confidence: 99%

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Shen

Lee

et al. 2017

SPIE Proceedings

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III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the "efficiency droop" effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.

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“…In the quest for ever-increasing output powers, high reflectivity (HR) coatings have been applied to the rear facets of several reported SLEDs [14]. The HR coating is designed to reflect almost all backward propagating light, which then undergoes another pass through the waveguide before ideally being coupled out of the device.…”

Section: Introductionmentioning

confidence: 99%

Gallium nitride light sources for optical coherence tomography

et al. 2017

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The advent of optical coherence tomography (OCT) has permitted high-resolution, non-invasive, in vivo imaging of the eye, skin and other biological tissue. The axial resolution is limited by source bandwidth and central wavelength. With the growing demand for short wavelength imaging, super-continuum sources and non-linear fibre-based light sources have been demonstrated in tissue imaging applications exploiting the near-UV and visible spectrum. Whilst the potential has been identified of using gallium nitride devices due to relative maturity of laser technology, there have been limited reports on using such low cost, robust devices in imaging systems.A GaN super-luminescent light emitting diode (SLED) was first reported in 2009, using tilted facets to suppress lasing, with the focus since on high power, low speckle and relatively low bandwidth applications. In this paper we discuss a method of producing a GaN based broadband source, including a passive absorber to suppress lasing. The merits of this passive absorber are then discussed with regards to broad-bandwidth applications, rather than power applications. For the first time in GaN devices, the performance of the light sources developed are assessed though the point spread function (PSF) (which describes an imaging systems response to a point source), calculated from the emission spectra. We show a sub-7µm resolution is possible without the use of special epitaxial techniques, ultimately outlining the suitability of these short wavelength, broadband, GaN devices for use in OCT applications.

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Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection

Cited by 39 publications

References 20 publications

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

High-power blue superluminescent diode for high CRI lighting and high-speed visible light communication

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Gallium nitride light sources for optical coherence tomography

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