Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance Rs and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (Rs<6 Ω∕□ for a film thickness above 1200 nm) and very rough (>4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (Rs≈100 Ω∕□ for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth.

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTThe non-uniform presence of shunting defects is a significant cause of poor reproducibility across large-area solar cells, or from batch-to-batch for small area cells, but the most commonly used value for shunt parameterisation (the shunt resistance) fails to identify the cause for shunting. Here, the use of equivalent circuit models to describe dark current-voltage characteristics of ZnO:Al/i-ZnO/CdS/CIGS/Mo devices in order to understand shunting behaviour is evaluated. Simple models, with a single shunt pathway, were tested but failed to fit experimental data, whereas a more sophisticated model developed here, which includes three shunting pathways, yielded excellent agreement throughout the temperature range of 183-323 K. The temperature dependence of fitting parameters is consistent with known physical models. Activation energies and contact barriers are determined from the model, and extracted diode factors are unique across the voltage range. A case study is presented whereby the model is used to diagnose poor reproducibility for CIGS devices (efficiency~3-14% across a 100 cm 2 plate). It's shown that lower efficiencies correlated with greater prevalence of Ohmic and non-Ohmic shunt currents, which may form due to pinholes in absorber and buffer layers respectively, whereas the quality of the main junction was constant for all cells (diode factor~1.5-2). Electron microscopy confirmed the presence of ZnO:Al/i-ZnO/Mo and ZnO:Al/CIGS/Mo regions, supporting the mult...

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Cu2ZnSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low‐bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical characteristics can be performed based on individual optical properties of each layer present in the cell structure. In this contribution, we have first determined the optical coefficients of individual thin films (i.e., (n, k) of the absorber, buffer, and window layers) to build a realistic model simulating the optical behavior of the whole cell stack we propose. Optical characterization was performed using two approaches, one based on ellipsometry measurements for characterizing thin flat cadmium sulfide (CdS) and zinc oxide (ZnO) layers and the other relying on reflectance and transmission (R/T) analysis for the rough CZTSe absorber. Then, we performed numerical simulations using as input experimental optical parameters predicting optimal CZTSe cell structure minimizing optical losses. The impact of each layer's thickness on the cell's short‐circuit current has been studied. A set of optimal thicknesses of each of the active layers was proposed. Finally, the proposed optical optimization was experimented practically leading to CZTSe cells with 9.7% and 10.4% efficiencies.

The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu2ZnSnSe4 (CZTSe) thin‐film solar cells, by using a Cd2+ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se2 (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7 min at 70 °C using a basic solution of cadmium acetate. X‐ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density–voltage (J–V), external quantum efficiency, and drive‐level capacitance profiling measurements. For the CZTSe‐based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency (η) from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (RS) of the dark and light J–V, as determined using the one‐diode model. The crossover effect between dark and light J–V curves is also significantly reduced by Cd PE treatment. Copyright © 2015 John Wiley & Sons, Ltd.

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTThe non-uniform presence of shunting defects is a significant cause of poor reproducibility across large-area solar cells, or from batch-to-batch for small area cells, but the most commonly used value for shunt parameterisation (the shunt resistance) fails to identify the cause for shunting. Here, the use of equivalent circuit models to describe dark current-voltage characteristics of ZnO:Al/i-ZnO/CdS/CIGS/Mo devices in order to understand shunting behaviour is evaluated. Simple models, with a single shunt pathway, were tested but failed to fit experimental data, whereas a more sophisticated model developed here, which includes three shunting pathways, yielded excellent agreement throughout the temperature range of 183-323 K. The temperature dependence of fitting parameters is consistent with known physical models. Activation energies and contact barriers are determined from the model, and extracted diode factors are unique across the voltage range. A case study is presented whereby the model is used to diagnose poor reproducibility for CIGS devices (efficiency~3-14% across a 100 cm 2 plate). It's shown that lower efficiencies correlated with greater prevalence of Ohmic and non-Ohmic shunt currents, which may form due to pinholes in absorber and buffer layers respectively, whereas the quality of the main junction was constant for all cells (diode factor~1.5-2). Electron microscopy confirmed the presence of ZnO:Al/i-ZnO/Mo and ZnO:Al/CIGS/Mo regions, supporting the mult...