Growth of ZnO :Al by high-throughput CVD at atmospheric pressure

Illiberi, A.; Simons, P.J.P.M.; Kniknie, B.; Deelen, J. van; Theelen, Mirjam; Zeman, Miro; Tijssen, M.; Zijlmans, W.; Steijvers, Henk; Habets, D.; Janssen, Annemieke; Beckers, E.H.A.

doi:10.1016/j.jcrysgro.2012.03.007

Cited by 35 publications

(28 citation statements)

References 30 publications

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“…To test this hypothesis, we did a room temperature experiment with MBTC followed by water and indeed the same binding energy shift of about 0.2 eV was observed. This mechanism of HO-Sn-(O-Si) 3 formation is supported by binding energy values found in literature as Jim enez et al investigated very thin SnO 2 films on SiO 2 and found a Sn 3d 5/2 binding energy of 487.5 eV for an Sn-O-Si system. 22 The same value is also found by Wang et al during his research on SnO 2 impregnated SiO 2 spheres.…”

Section: Resultssupporting

confidence: 68%

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

Mannie

Gerritsen

Abbenhuis

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The chemistry of atmospheric pressure chemical vapor deposition (APCVD) processes is believed to be complex, and detailed reports on reaction mechanisms are scarce. Here, the authors investigated the reaction mechanism of monobutyl tinchloride (MBTC) and water during SnO2 thin film growth using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). XPS results indicate an acid–base hydrolysis reaction mechanism, which is tested with multilayer experiments, demonstrating self-terminating growth. In-house developed TEM wafers are used to visualize nucleation during these multilayer experiments, and results are compared with TEM results of APCVD samples. Results show almost identical nucleation behavior implying that their growth mechanism is identical. Our experiments suggest that in APCVD, when using MBTC and water, SnO2 film growth occurs via a heterolytic bond splitting of the Sn-Cl bonds without the need to invoke gas-phase radical or coordination chemistry of the MBTC precursor.

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Section: Resultssupporting

confidence: 68%

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

Mannie

Gerritsen

Abbenhuis

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Numerous methods for the deposition of ZnO films have been proposed, including thermal chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PE-CVD), temporal atomic layer deposition (ALD), magnetron sputtering, pulsed laser deposition, spray pyrolysis and sol-gel process. [2][3][4][5][6][7][8][9][10] The most common technology for the industrial deposition of doped ZnO films is sputtering. Low values of resistivity (∼4 10 −4 Ohm cm), high carrier mobility (∼50 cm 2 /V s) and high transparency in the visible range (>85%) have been achieved in doped ZnO films (e.g.…”

mentioning

confidence: 99%

Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Illiberi

Scherpenborg

Roozeboom

et al. 2014

ECS J. Solid State Sci. Technol.

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Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range from In/[In+Zn] = 0 to 23% by co-injecting the vaporized metal precursors (i.e. DEZ and TMIn) in the deposition region and varying their flows. A high doping efficiency (up to 95%) is achieved, resulting in films with very high carrier density (6·1020 cm−3), low resistivity (3 mΩ·cm) and high transparency in the visible range (> 85%). The morphology of the films changes from polycrystalline to amorphous with increasing indium content above 15%, while maintaining a low resistivity value (< 7 mΩ·cm). Spatial-ALD combines a fine tuning of the composition, morphology and electrical properties of ZnO:In films with high deposition rates (> 0.1 nm/s).

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“…This type of layers was used for deposition of a-Si solar cells, resulting in an efficiency of approximately 8%. Furthermore, it was observed that the transmittance shows a steep drop above 1100 nm due to free carrier absorption [12], while in figure 1 a much more smoother decline with wavelength was shown for SnO 2 :F. It is unclear why the spectral distribution of the free carrier absorption is different in this way. The APCVD process of ZnO has a deposition rate of 14 nm/s with a single injector under which the sample is passed.…”

Section: Zno Depositionmentioning

confidence: 91%

“…An APCVD process was developed with ZnO:Al layers having a conductivity as low as 0.5 mΩ cm and a transmittance above 80% [12]. This type of layers was used for deposition of a-Si solar cells, resulting in an efficiency of approximately 8%.…”

Section: Zno Depositionmentioning

confidence: 99%

Transparent conducting materials: overview and recent results

et al. 2012

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An overview of different transparent conductors is given. In addition, atmospheric pressure CVD of ZnO resulted in conductivities below 1 mΩ cm for a temperature of 480°C, whereas at a process temperature of 200°C a value of 2 mΩ cm was obtained. Also atmospheric pressure spatial ALD was used to make conductive ZnO. Furthermore, the properties of transparent conductive oxides (TCO) can be enhanced by application of metallic grids. This way, sheet resistances of below 0.1 Ω/sq and transmittances above 85 % can be achieved. Modeling indicates that the performance of thin film cells can be enhanced by18% using a grid/TCO combination. Light scattering is a vital element of thin film solar cells and both texturization and multimaterial approaches for advanced light management such as plasmonics are discussed.

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Growth of ZnO :Al by high-throughput CVD at atmospheric pressure

Cited by 35 publications

References 30 publications

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Transparent conducting materials: overview and recent results

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