Industrial high-rate (∼14nm/s) deposition of low resistive and transparent ZnOx:Al films on glass

Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, Henk; Habets, D.; Simons, P.J.P.M.; Janssen, Annemieke; Beckers, E.H.A.

doi:10.1016/j.solmat.2011.01.007

Cited by 32 publications

(21 citation statements)

References 26 publications

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“…8 There are several deposition techniques applied to synthesize ZnO, such as sol-gel, 14 spray pyrolisis, 15 magnetron sputtering, [16][17][18] pulsed laser deposition, 19,20 atomic layer deposition, 21,22 and metalorganic chemical vapor deposition (MO-CVD). 23 Gas phase-based techniques, as MO-CVD, have also shown potential to grow high quality aluminumdoped ZnO (ZnO:Al) layers 24,25 at deposition rates as high as $14 nm/s 26 on a large surface area (>10 cm 2 ). 25,26 In the plasma CVD techniques, the overall heat load of the process is lowered, as the substrate temperature is reduced down to the range of 100-200 C. For example, in the past years, we have shown that the expanding thermal plasma (ETP) leads to good quality ZnO:Al layers deposited up to 1 nm/s with a resistivity of 8 Â 10 À4 X cm for 1100 nm film thickness, at a substrate temperature of 200 C, as reported by Volintiru et al 27 One of the drawbacks of the CVD processes, [27][28][29] unlike the sputtering approach, is the development of a gradient in resistivity as function of the film thickness, usually present over a large thickness range.…”

Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ponomarev, M., Verheijen, M. A., Keuning, W., Sanden, van de, M. C. M., & Creatore, M. (2012). Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 112(4), 043708-1/7. [043708]. DOI: 10.1063/1.4747942 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin ( 300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 Â 10 À4 X cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies. Highly conducting (doped) ZnO thin films are being used in diverse applications, such as light-emitting 1 and laser diodes, 2 architectural and automotive glazing, 3 thin-film transistors, 4,5 and high efficiency thin-film solar cells. 6 This latter makes use of ZnO as transparent conducting oxide (TCO), whe...

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Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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“…In view of a possible industrial upscale of this AP-CVD process, multiple-passes (i.e., 3 passes) of the glass substrate in the deposition region (at a speed of 150 mm/ min) have been performed (as described in Ref. [21]) to deposit thick (1056 nm) ZnO x :Al films, which are used as front electrode in p i n a-Si:H solar cells, presented in this paper.…”

Section: Methodsmentioning

confidence: 99%

“…A high deposition rate is particularly important for solar cell application, since high production throughputs are required for solar cells' manufacturing to achieve an economy of scale. Recently, we have shown that ZnO x :Al films can be grown at very high deposition rates (up to $ 14 nm/s) on a movable glass substrate, by means of a metalorganic CVD process at atmospheric pressure (AP-MOCVD) [21]. In this paper we investigate the effect of deposition temperature (from 380 1C to 540 1C) on the film growth, both experimentally and numerically.…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO :Al by high-throughput CVD at atmospheric pressure

Illiberi

Simons

Kniknie

et al. 2012

Journal of Crystal Growth

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“…5,6 The industrial needs for deposition processes with highthroughput, low production costs, and no damage to the substrate (e.g., no bombardment by energetic ions) has driven the development of alternative techniques to sputtering for the growth of TCOs, such as atmospheric pressure CVD, low pressure expanding-thermal-plasma metalorganic-CVD, atmospheric pressure PE-CVD, and atmospheric pressure spatial atomic-layer-deposition (spatial-ALD). [7][8][9][10] Spatial-ALD combines the advantages of conventional ALD (e.g., superior control of film composition, growth of uniform, pinhole free, and highly conformal thin-films on large area and flexible substrates) with high deposition rates (up to $nm/s). 11 For this reason, atmospheric pressure spatial-ALD is emerging as an industrially scalable technique for the deposition of thin film electrodes (e.g., ZnO) and encapsulation (e.g., by Al 2 O 3 thin-films) of solar and electronic devices.…”

Section: Introductionmentioning

confidence: 99%

On the environmental stability of ZnO thin films by spatial atomic layer deposition

Illiberi¹,

Scherpenborg²,

Theelen³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Undoped and indium-doped ZnO films have been deposited by atmospheric spatial atomic-layer-deposition (spatial-ALD). The stability of their electrical, optical, and structural properties has been investigated by a damp-heat test in an environment with 85% relative humidity at 85 °C. The resistivity of the ZnO films increased during damp-heat exposure mainly due to a sharp decrease in the carrier mobility, while the carrier density and transparency degraded only partially. The increase in resistivity can be ascribed to a degradation of the structural properties of ZnO films, resulting in a higher level of tensile stress, as indicated by x-ray diffraction analysis, and in a reduced near-ultravoilet emission level in their photoluminescence spectra. Al2O3 thin (25–75 nm) films grown by spatial-ALD at 0.2 nm/s are used as moisture barrier to effectively enhance the stability of the electrical and structural properties of the films.

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Industrial high-rate (∼14nm/s) deposition of low resistive and transparent ZnOx:Al films on glass

Cited by 32 publications

References 26 publications

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Growth of ZnO :Al by high-throughput CVD at atmospheric pressure

On the environmental stability of ZnO thin films by spatial atomic layer deposition

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