Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Knoops, H. C. M., Loo, van de, B. W. H., Smit, S., Ponomarev, M., Weber, J. W., Sharma, K., ... Creatore, M. (2015). Optical modeling of plasma-deposited ZnO films : electron scattering at different length scales. Journal of Vacuum Science and Technology. A: Vacuum, Surfaces, and Films, 33, 021509-1/13. DOI: 10.1116/1.4905086 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Articles you may be interested in Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk J. Appl. Phys. 117, 045304 (2015) In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means o...
Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ponomarev, M., Verheijen, M. A., Keuning, W., Sanden, van de, M. C. M., & Creatore, M. (2012). Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 112(4), 043708-1/7. [043708]. DOI: 10.1063/1.4747942 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin ( 300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 Â 10 À4 X cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies. Highly conducting (doped) ZnO thin films are being used in diverse applications, such as light-emitting 1 and laser diodes, 2 architectural and automotive glazing, 3 thin-film transistors, 4,5 and high efficiency thin-film solar cells. 6 This latter makes use of ZnO as transparent conducting oxide (TCO), whe...
Improved conductivity of aluminum-doped Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Related ArticlesHigh Si and Ge n-type doping of GaN doping -Limits and impact on stress Appl. Phys. Lett. 100, 122104 (2012) Generalized conductivity model for polar semiconductors at terahertz frequencies Appl. Phys. Lett. 100, 122103 (2012) Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices J. Appl. Phys. 111, 054513 (2012) Thermoelectric properties of Zn-doped GaSb J. Appl. Phys. 111, 043704 (2012) Efficient room-temperature spin detector based on GaNAs
Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. À3 V Á cm) at low film thicknesses (<300 nm) as a result of a high grain boundary and void density. Microscopy studies of the early growth stage reveal that a high nucleation probability and strong <0002>-texture are the causes of this microstructure. We investigate how the precursor feed composition (diethylzinc-to-O 2 flow rate ratio) can be utilised to modify the growth mechanism and consequently reduce film resistivity ($10 À4 V Á cm), focussing on the role that this flow rate ratio has on the plasma chemistry developing in the downstream region of the expanding plasma (as supported by Langmuir probe and mass spectrometry measurements).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.