Gas-jet electron beam plasma chemical vapor deposition method for solar cell application

Sharafutdinov, R. G.; Khmel, S. Ya.; Shchukin, V. G.; Ponomarev, M. V.; Баранов, Е. А.; Волков, А. В.; Semenova, O. I.; Fedina, L. I.; Dobrovolsky, P. P.; Kolesov, B. A.

doi:10.1016/j.solmat.2005.01.012

Cited by 31 publications

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“…2 that monosilane addition to the carrier gas significantly reduces the electron density, whereas the temperature remains almost unchanged. The grown silicon films were microcrystalline ones, but the degree of crystallinity (crystallization) is substantially higher and its gradient is lower at high flow rates [4]. Apparently, the reasons are better screening of the growing film surface from high-energy particles, on one hand, and better mixing of the activated flow behind the shock wave, on the other hand.…”

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Gas flow activated in an electron-beam plasma

Konstantinov

Khmel

2007

J Appl Mech Tech Phys

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Probe measurements of electron temperature and density, electron energy distribution functions, and plasma potential in a free gas jet activated in an electron-beam plasma and in a planar reactor are presented. The measurements are performed by single, double, and triple electrostatic probes in jets of helium-argon and helium-argon-monosilane gas mixtures. The latter mixture is used to deposit films of microcrystalline and epitaxial silicon. Microcrystalline silicon films of higher quality are obtained in a dense (n e ≈ 10 17 m −3 ) and cold (T e ≈ 1.0-0.5 eV) plasma with a low potential (U sp ≈ 10 V), whereas the growth of monocrystalline silicon films requires a hotter plasma (T e ≈ 3-5 eV) with a potential U sp ≈ 15 V.Key words: probe diagnostics, electron-beam plasma, chemical vapor deposition of thin silicon films.Introduction. Deposition of thin films often involves chemical vapor methods with activation of gaseous reagents in a discharge plasma or electron-beam plasma [1,2]. In particular, a silane plasma is used for silicon-film deposition [3][4][5]. The study of such a plasma is an urgent problem, and one of the most widely used diagnostic methods is the Langmuir probe [6][7][8]. Probe characteristics can yield information on the electron temperature, electron density, plasma potential, and, in the general case, the electron energy distribution function. If a single or a double probe is used, however, it is impossible to determine instantaneous values of plasma parameters (measuring and processing of the current-voltage characteristic is a rather long procedure). Such information can be obtained by a triple probe [8].It was demonstrated [9] by means of probe diagnostics that the temperature and density of secondary electrons in a nitrogen electron-beam plasma are 0.5-2.5 eV and 10 16 -10 17 m −3 , respectively. The temperature was found to decrease and the density was found to increase with increasing pressure in the electron-beam plasma. The measurements performed in an argon electron-beam plasma [10] showed that the electron temperature is approximately 1 eV, the electron density is 5 · 10 16 to 5 · 10 17 m −3 , and the plasma potential is approximately 4 V. Such a plasma produces a soft and nondestructive effect on the surface and can be used for material processing and depositing high-quality thin films [2]. Deposition of epitaxial layers requires a harder plasma, but a principally important quantity in this case is the plasma potential [11].In a reactive plasma, the probe surface is contaminated by growing films; hence, correct measurements in such a plasma are ensured by using heated probes [7]. It was found in [12] with the use of heated probes that the electron temperature and density decrease with increasing flow rate of monosilane or pressure in the discharge chamber.The present paper describes investigations performed in free jets of helium-argon and helium-argonmonosilane mixtures activated in an electron-beam plasma and in a gas flow inside a planar reactor. The goal of the present work was ...

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confidence: 96%

“…Deposition of thin films often involves chemical vapor methods with activation of gaseous reagents in a discharge plasma or electron-beam plasma [1,2]. In particular, a silane plasma is used for silicon-film deposition [3][4][5]. The study of such a plasma is an urgent problem, and one of the most widely used diagnostic methods is the Langmuir probe [6][7][8].…”

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confidence: 99%

Gas flow activated in an electron-beam plasma

Konstantinov

Khmel

2007

J Appl Mech Tech Phys

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“…46025.2544 Введение В настоящее время для осаждения тонких пленок кремния широко используются плазмохимические ме-тоды с активацией газообразного моносилана (SiH 4 ) в плазме электронного пучка [1]. Перспективность ис-пользования пучково-плазменного разряда представляет повышенный интерес в области плазмохимии, в частно-сти для реализации технологий на основе плазменных методов получения покрытий [2].…”

Section: (поступило в редакцию 3 ноября 2017 г)unclassified

“…В качестве генератора электронного пучка использовали источник электронов на основе разряда с полым катодом, разработанный в Институте под руко-водством Р.Г. Шарафутдинова [1,11]. Электродная конфигурация разрядной системы при-ведена на рис.…”

Section: методика экспериментаunclassified

Высокоэффективный Источник Электронов С Полым Катодом Для Технологий Осаждения Тонких Пленок И Обработки Поверхностей При Форвакуумных Давлениях

Щукин¹,

Константинов²,

Морозов³

2018

Журнал Технической Физики

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“…The method of gas-jet plasma chemical deposition with electron-beam plasma activation (the gasjet electron beam plasma chemical vapor deposition method) has been developed and actively used during two recent decades [5,6]. It is schematically shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

Khmel

2012

J. Engin. Thermophys.

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Thin silicon films were synthesized by the gas-jet electron beam plasma chemical vapor deposition method from monosilane-argon, monosilane-argon-helium, and monosilane-argonhydrogen mixtures. Addition of argon to the argon-silane mixture increased the deposition rate of silicon films, whereas addition of helium and hydrogen to the same mixture decreased the growth rate. It is shown that the process of silicon film deposition by this method from argon-monosilane mixture is primarily governed by fast secondary electrons, and argon dilution of mixture leads to increasing concentration of fast secondary electrons and increasing deposition rate of silicon films. Dilution of the initial mixture with helium or hydrogen causes a decrease in the deposition rate either due to gas-dynamic behavior of the supersonic jet of the mixture of light and heavy gases, or due to the etching effect of metastable helium atoms or hydrogen atoms on the surface of the growing silicon film.

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Gas-jet electron beam plasma chemical vapor deposition method for solar cell application

Cited by 31 publications

References 7 publications

Gas flow activated in an electron-beam plasma

Gas flow activated in an electron-beam plasma

Высокоэффективный Источник Электронов С Полым Катодом Для Технологий Осаждения Тонких Пленок И Обработки Поверхностей При Форвакуумных Давлениях

Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma

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