We developed a complementary metal oxide semiconductor (CMOS) integrated device for optogenetic applications. This device can interface via neuronal tissue with three functional modalities: imaging, optical stimulation and electrical recording. The CMOS image sensor was fabricated on 0.35 μm standard CMOS process with built-in control circuits for an on-chip blue light-emitting diode (LED) array. The effective imaging area was 2.0 × 1.8 mm². The pixel array was composed of 7.5 × 7.5 μm² 3-transistor active pixel sensors (APSs). The LED array had 10 × 8 micro-LEDs measuring 192 × 225 μm². We integrated the device with a commercial multichannel recording system to make electrical recordings.
A multielectrode array coupled complementary metal oxide semiconductor (CMOS) image sensor (MARC sensor) was developed for an in vitro electrophysiology experiment. The sensor chip was fabricated by a standard CMOS process, and has a 64 microelectrode array and a 180×180 photodiode pixel array. The size of an on-chip microelectrode is 60×60 µm2 and the pixel size is 7.5×7.5 µm2. In addition, Pt black was fabricated on microelectrodes to obtain stimulation electrodes. The imaging function was demonstrated by the anatomical observation of a mouse hippocampal slice, and the electrical recording function was also demonstrated by monitoring the extracellular field potentials of the brain slice using on-chip microelectrodes. The MARC sensor is compatible with existing in vitro multichannel recording systems. This is the first report supporting our concept that microelectrode arrays and large-sized optical systems can be integrated onto single large-scale integration (LSI) architecture.
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