The combined use of scanning electron microscopy, Mössbauer spectrometry, X‐ray diffraction and also DC/AC electrical and magnetic characterization techniques allowed this work to elucidate the influence of metal‐to‐dielectric component ration, and effect of oxygen in gas mixture on phase structure and properties of the Co0.45Fe0.45Zr0.10 ferromagnetic nanoparticles in amorphous dielectric Al2O3 matrix. The films of 3–5 µm thickness with compositions of 30 at.% < X < 60 at.% were sputtered on a single substrate from the compound target in the chamber containing either pure Ar or Ar‐O gas mixture. The films sputtered in Ar‐O mixture resulted in partial oxidation of metallic nanoparticles causing the shift of percolation threshold X c to 55 at.% as compared to 45–47 at.% for the samples deposited in pure Ar. Mössbauer studies of the films sputtered in Ar gas have shown that at X < X c metallic nanoparticles were at superparamagnetic state but for X > X c metallic phase showed a ferromagnetic behavior. DC carrier transport at the temperatures of 77–350 K were explained by hopping mechanisms and described by Mott and Shklowski‐Efros laws. That was also confirmed by the relationship power law of Z ′(f ) ∼ f –s (s ≤ 2) for real part of impedance at low temperatures (<120 K) for the samples on dielectric side of MIT. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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We observed an inductive contribution to impedance in granular (Fe 0.45 Co 0.45 Zr 0.10 ) x (Al 2 O 3 ) (1-x) and (Fe 0.45 Co 0.45 Zr 0.10 ) x (PZT) (1-x) nanocomposite films deposited in Ar + O 2 atmosphere. The films with x ≈ ≈ ≈ ≈ 0.30 (in dielectric regime) demonstrated negative capacitance effect which were explained by hopping conductance of electrons over FeCoZr nanoparticles covered with complicated CoFe-oxides and embedded into dielectric matrix. In particular, at the determined conditions such a structure of nanocomposite resulted in the increase of hopping electron mean life time on nanoparticles and delay its returning jump under subjection of alternating electric field that created the possibility for positive angles of the phase shifts θ θ θ θ and properly negative capacitance (inductive-like contribution) effect.

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An algorithm for the calculation of solar cell parameters (series and parallel resistance, diode coefficient, reverse current density) calculation from its current-voltage characteristics at fixed illumination intensity is proposed. The possibility of determining the p-n junction depth on the basis of spectral dependencies of diode photocurrent at different values of the applied bias voltage is shown.

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