Effect of annealing on the physical properties of thermally evaporated In2S3 thin films

Rasool, Sk. Nayab; Saritha, K.; Reddy, K.T. Ramakrishna; Тиванов, М. С.; Trofimova, Alexandra; Tikoto, S.E.; Bychto, Leszek; Patryn, Aleksy; Maliński, M.; Гременок, В. Ф.

doi:10.1016/j.cap.2018.11.016

Cited by 29 publications

(16 citation statements)

References 39 publications

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“…So, the absorption edge shifts from the lower to higher wavelength with annealing, which indicates the increase of optical transmittance. Many researcher reports that the film had an average transparency 75% in the visible region which may be associated with the film's good structural homogeneity and crystallinity and this is good for optical device application [2,14,21].…”

Section: Optical Propertiesmentioning

confidence: 99%

“…The Urbach tail is an essential parameter used to estimate the level of crystallinity and structural defect or degree of disorder present in the film materials [13,14,23]. Generally, the optical transmittance and optical band gap structure affected by the width of localized states available in the films which are known as Urbach tail.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…During postannealing process of thin films, recrystallization occurs, which causes improvement in crystallinity of the films and increases grain size depending up on the working temperature. Therefore, annealing of the films at optimized conditions could modulate residual stress and improve the film quality with reduced surface roughness and defects present in the films [6,10,14]. Several techniques have been used for the preparation of AZO thin films.…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

et al. 2019

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Aluminium doped zinc oxide (AZO) thin films were prepared on glass substrate by spray pyrolysis technique and subsequently their structural, morphological and optical properties were investigated and analyzed as a function of annealing temperature. The films were deposited at 350°C and were annealed at temperature 350, 400, 450 and 500°C. X-ray diffraction (XRD) analysis confirms that both deposited and annealed films are polycrystalline in nature and have hexagonal wurtzite structure. The crystalline size as well as the crystalline quality of the film was found to increase with the increase of annealing temperature to a certain point. However, the dislocation density and the compressive stress induced in as-deposited AZO films reduce with annealing temperature. SEM image reveals that the deposited film has nanorope like morphology. The average diameter of the rope and the density of the morphology increases with the increase of annealing temperature. As the annealing temperature increases from 350°C to 450°C, the average transmittance of the films increases and the band gap value decreases from 3.25 eV to 3.17 eV. In addition, obtained results also show that urbach energy, extinction coefficient, refractive index, optical conductivity has changes noticeably with annealing temperature.

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Section: Optical Propertiesmentioning

confidence: 99%

Section: Optical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

et al. 2019

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“…Both cubic and tetragonal phases were identified with a change in the preferred orientation from (300) to (111) for films annealed at 200°C. The existence of both tetragonal and cubic phases of In 2 S 3 is most commonly observed in the literature for In 2 S 3 thin films, irrespective of the deposition techniques used [22,[27][28][29]. For films annealed at 250°C, the secondary tetragonal phase was completely suppressed and only cubic phase with an intense (111) plane was observed as the preferred orientation with better crystallinity.…”

Section: Structural Analysis Figures 1(a) and (B)mentioning

confidence: 83%

“…Above this temperature, the properties of the layers started to deteriorate, particularly the structure and optical properties. Therefore in the present study, the annealing temperature of the films was optimized to 250°C (See reference [22] for details). Further, annealing at lower temperatures is more economical to scale up the technology.…”

Section: Methodsmentioning

confidence: 99%

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films

Rasool

Saritha

Reddy

et al. 2020

Mater. Res. Express

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Indium sulfide (In 2 S 3 ) is a wide bandgap semiconductor, which is widely used as a window/buffer layer in thin film solar cell applications. In 2 S 3 thin films were deposited using thermal evaporation technique and were annealed in sulfur ambient at 200°C and 250°C. Further, these films were treated in inductively coupled argon plasma sputtering with an average argon ion energy of 75 eV for 30 s. The paper presents the effect of Ar-plasma treatment on structure, elemental composition, morphology and topography of In 2 S 3 films and the results were reported. Further, the optimized In 2 S 3 layers were continued for plasma etching process with an average argon ion energy of 25 eV to study the effect of plasma etching duration on the growth of metallic indium nanoparticles over the film surface and the results were discussed in detail.

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Impact of composition on microstructural, electrical and optical properties of ZnO thin films incorporation by In ₂ O ₃ for solar cells

Ahmed

Bakry

Shaaban

2022

Intl J of Energy Research

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Summary We report in deposition of highly transparent and conductive thin layers of ZnO‐In2O3 by the electron beam gun. The effects of the composition of (ZnO)(1 − x)(In2O3)x (x = 0, 2, 4, 6, 8, 10 at%) films on the structure and physical properties were investigated. The films were strongly oriented along the (002) plane. The X‐ray diffraction analysis showed that as the In2O3 content increases to 6% of the doping level, the grain size increases and the lattice decreases, and then reverse occurs at 8% to 10% of In2O3 content. The surface of the ZnO‐In2O3 thin films was examined by the atomic force microscopy. By constructing a three‐layer model to analyze the spectroscopic ellipsometry experimental data, the optical parameters and energy gap were extracted. As the In2O3 content increased, the energy gap decreased from 3.37 to 3.312 at the expense of ZnO. The electrical characteristics of the (ZnO)(1 − x)(In2O3)x films were measured using the four‐point probe method. We show that the resistivity and sheet resistance of (ZnO)(1 − x)(In2O3)x decrease with increasing the In2O3 concentration. The resistivity was found to attain minimum value of 4.5 × 0−4 Ω cm and sheet resistance of 45 Ω/sq at 6% of the In2O3 content. The carrier concentration and the carrier mobility increase with In2O up to 6% of the doping level of In2O3 and then decreases. The presented physical properties of the grown (ZnO)0.94((In2O3)0.06 films recommend it for optoelectronic and solar cell applications.

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Effect of annealing on the physical properties of thermally evaporated In2S3 thin films

Cited by 29 publications

References 39 publications

Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films

Impact of composition on microstructural, electrical and optical properties of ZnO thin films incorporation by In ₂ O ₃ for solar cells

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Effect of annealing on the physical properties of thermally evaporated In2S3 thin films

Cited by 29 publications

References 39 publications

Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

Effect of annealing temperature on structural morphological and optical properties of spray pyrolized Al-doped ZnO thin films

Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In2S3 films

Impact of composition on microstructural, electrical and optical properties of ZnO thin films incorporation by In 2 O 3 for solar cells

Contact Info

Product

Resources

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Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films

Impact of composition on microstructural, electrical and optical properties of ZnO thin films incorporation by In ₂ O ₃ for solar cells