Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In₂S₃ films

Abstract

Indium sulfide (In 2 S 3 ) is a wide bandgap semiconductor, which is widely used as a window/buffer layer in thin film solar cell applications. In 2 S 3 thin films were deposited using thermal evaporation technique and were annealed in sulfur ambient at 200°C and 250°C. Further, these films were treated in inductively coupled argon plasma sputtering with an average argon ion energy of 75 eV for 30 s. The paper presents the effect of Ar-plasma treatment on structure, elemental composition, morphology and topography of In 2 S 3 films and the results were reported. Further, the optimized In 2 S 3 layers were continued for plasma etching process with an average argon ion energy of 25 eV to study the effect of plasma etching duration on the growth of metallic indium nanoparticles over the film surface and the results were discussed in detail.

Synthesis and theoretical study of a mixed-ligand indium(iii) complex for fabrication of β-In2S3 thin films via chemical vapor deposition

“…The formation of metallic indium at 800 °C was also evident in the mass spec- Chemical vapor deposition of compound [2] The chemical vapor deposition (CVD) experiments of [2] on an FTO substrate at a substrate temperature of 300 °C resulted in crystalline β-In 2 S 3 films. 49 Following the CVD process, the FTO substrate was uniformly covered with In 2 S 3 grains after 30 minutes of deposition time. The SEM analyses (Fig.…”

Морфология поверхности и структурные свойства кристаллов GaTe после ионно-плазменной обработки

“…Исследование химического состава кристаллов GaTe в исходном состоянии, проведенное методом ЭДРА, показало, что отношение атомных концентраций галлия и теллура для изучаемых кристаллов в разных точках съемки находится в интервале 1.04−1.12. Дополнительно в приповерхностных слоях фиксировалось наличие атомов кислорода (44−53 at.%), что связано с известными активными окислительными процессами на обработке пленок In 2 S 3 [36], содержащих металл индий с низкой температурой плавления (429.7 K).…”

“…Известно [32], что метод ионно-плазменной обработки позволяет эффективно модифицировать поверхность твердых тел и приводить к ее наноструктурированию. В наших работах [33][34][35][36] показаны примеры успешного формирования наноструктур различного вида (нанонитей, наностержней, наноконусов и т. д.)…”

Indium Chalcogenide Nanomaterials in the Forefront of Recent Technological Advancements

“…heterostructures for potential use optoelectronics [21]. Bilayer and trilayer InS triangular nanoflakes have also been prepared by chemical vapor deposition [22], potential applications envisaged as heterojunctions in nanoelectronic devices.…”