A study of magnetotransport in the n-Si/SiO 2 /Ni nanostructures with granular Ni nanorods in SiO 2 pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/ SiO 2 /Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25 K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D− states in the upper Hubbard band due to the accumulation of the charge injected by current.
Superconductivity is studied in hybrids consisting of ultrathin superconducting film/few layer graphene. Two different superconductors were used at this purpose, Nb and NbN. An increase of the superconducting critical temperature, T c , is observed when graphene is put into contact with Nb. The largest increase is obtained for the thinnest Nb layer, which has a T c 8% larger with respect to the single Nb film. In the case of NbN the effect is not so pronounced. Experimental data are discussed by considering the possible modification of the phonon spectrum in the superconductor due to the presence of the graphene. Within an elementary one-dimensional model based on an elastic coupling between nearestneighbor atoms, we demonstrate that the phonon spectrum in the superconductor is modified at low energies with the subsequent enhancement of the effective electron-phonon coupling constant. While the strong oscillating nature of the electron-phonon interaction, 2 (), in NbN could lead to the insensitivity of T c on the low-energy phonons generated by the graphene, the almost constant behavior of 2 () in Nb favors the increase of the superconducting critical temperature.
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