Hopping of electron transport in granular Cux(SiO2)1–x nanocomposite films deposited by ion-beam sputtering

Свито, И. А.; Fedotov, А.К.; Kołtunowicz, Tomasz N.; Żukowski, P.; Kalinin, Yu. E.; Sitnikov, A. V.; Czarnacka, Karolina; Saad, A.

doi:10.1016/j.jallcom.2014.01.136

Cited by 33 publications

(18 citation statements)

References 16 publications

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“…as for dc measurements in [16,17]. In doing so, in the dielectric regime nanocomposites display predominance of capacitive contribution in the reactive part of impedance whereas for x > 0.68 nanocomposites being on metallic side of MIT show prevailing inductive-like contribution in the reactive impedance ImZ (f ) in the form of negative capacitance eect with θ > 0.…”

Section: Methodsmentioning

confidence: 86%

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Mechanisms of Carrier Transport in Cu_x(SiO₂)_1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

et al. 2015

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The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cux(SiO2)1−x nanocomposite lms around the percolation threshold xC in the temperature range of 4300 K and frequencies of 20−10 6 Hz. The behavior of low-frequency ReZ(T ) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold xC ≈ 0.59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f ) at temperatures T > 10 K for the samples with x < xC exhibited behavior close to ReZ(f ) ≈ f −s with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > xC), the frequency dependences of ReZ(f ) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.

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Section: Methodsmentioning

confidence: 86%

“…Such behavior is observed in many metalinsulator composites where metallic granules in the dielectric matrix are nanosized and show hopping mechanism of carrier transport due to jumps of electrons between the neighboring metallic nanoparticles (see [3,10,16,17]). …”

Section: Methodsmentioning

confidence: 87%

Mechanisms of Carrier Transport in Cu_x(SiO₂)_1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

et al. 2015

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“…The samples with the metallic phase content x from 9.6 at.% to 72.9 at.% were examined directly after preparation (nonannealed samples). For checking the stoichiometry of the samples the X-ray microanalysis was used with an accuracy of ∼ 1% [25].…”

Section: Resultsmentioning

confidence: 99%

“…In the paper [25] the changes of matrix chemical composition for metallic phase Cu nanoparticles content within the range 9.6 at.% < x < 72.9 at.% were determined. Therefore there was introduced new nomenclature which includes the variability of oxygen content in the matrix for dierent metallic phase x content.…”

Section: Introductionmentioning

confidence: 99%

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Percolation Phenomena in Cu_x(SiO_y)_100-xNanocomposite Films Produced by Ion Beam-Sputtering

et al. 2015

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In this paper the results of examinations of nanocomposites Cux(SiOy)100−x produced by ion beam sputtering using argon ions were presented. The examinations were performed by the use of ac devices for measuring frequency in the range 50 Hz1 MHz and temperatures from 81 K to 273 K. The measurements were performed for the samples directly after production. Based on temperature dependences of conductivity σ, which were determined at the frequency 100 Hz, the Arrhenius graphs were prepared. From these graphs conductivity activation energies ∆E were calculated. Dependences of conductivity and activation energy of electrons on the metallic phase content x at the frequency 100 Hz were determined. Analysis of the obtained dependences shows that conductivity is a parabolic function of the metallic phase content x in nanocomposites. Changes of activation energies of nanocomposites, in which metallic phase contents are in the ranges x < 12 at.% and x > 68 at.%, demonstrate negative values metallic type of conductivity. In the range 12 at.% < x < 68 at.% activation energies have positive values the dielectric type of conductivity. It was established that for the metallic phase content of about 68 at.% the real percolation threshold occurs, and the conduction changes from dielectric to metallic type.

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AC Dependence of Electrical Properties of SiOx/ZrO2 Multilayer Nanocomposites with Si Nanocrystals

Kołtunowicz¹,

Czarnacka²,

Федотов³

2019

Lecture Notes in Mechanical Engineering

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Hopping of electron transport in granular Cux(SiO2)1–x nanocomposite films deposited by ion-beam sputtering

Cited by 33 publications

References 16 publications

Mechanisms of Carrier Transport in Cu_x(SiO₂)_1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

Mechanisms of Carrier Transport in Cu_x(SiO₂)_1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

Percolation Phenomena in Cu_x(SiO_y)_100-xNanocomposite Films Produced by Ion Beam-Sputtering

AC Dependence of Electrical Properties of SiOx/ZrO2 Multilayer Nanocomposites with Si Nanocrystals

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Hopping of electron transport in granular Cux(SiO2)1–x nanocomposite films deposited by ion-beam sputtering

Cited by 33 publications

References 16 publications

Mechanisms of Carrier Transport in Cux(SiO2)1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

Mechanisms of Carrier Transport in Cux(SiO2)1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

Percolation Phenomena in Cux(SiOy)100-xNanocomposite Films Produced by Ion Beam-Sputtering

AC Dependence of Electrical Properties of SiOx/ZrO2 Multilayer Nanocomposites with Si Nanocrystals

Contact Info

Product

Resources

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Mechanisms of Carrier Transport in Cu_x(SiO₂)_1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

Mechanisms of Carrier Transport in Cu_x(SiO₂)_1-xNanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

Percolation Phenomena in Cu_x(SiO_y)_100-xNanocomposite Films Produced by Ion Beam-Sputtering