Influence of Matrix Type on Negative Capacitance Effect in Nanogranular Composite Films FeCoZr-Insulator

Abstract

We observed an inductive contribution to impedance in granular (Fe 0.45 Co 0.45 Zr 0.10 ) x (Al 2 O 3 ) (1-x) and (Fe 0.45 Co 0.45 Zr 0.10 ) x (PZT) (1-x) nanocomposite films deposited in Ar + O 2 atmosphere. The films with x ≈ ≈ ≈ ≈ 0.30 (in dielectric regime) demonstrated negative capacitance effect which were explained by hopping conductance of electrons over FeCoZr nanoparticles covered with complicated CoFe-oxides and embedded into dielectric matrix. In particular, at the determined conditions such a structure of nanocomposite resulted in the increase of hopping electron mean life time on nanoparticles and delay its returning jump under subjection of alternating electric field that created the possibility for positive angles of the phase shifts θ θ θ θ and properly negative capacitance (inductive-like contribution) effect.

AC Hopping Conductance in Nanocomposite Films with Ferromagnetic Alloy Nanoparticles in a PbZrTiO3 Matrix

“…[18][19][20] The observation of NC is associated with a dominant inductive-like (L) contribution in the imaginary part of the admittance, which could be utilized to produce microscale planar inductive elements in electrical engineering of integrated circuits. It has been proved that the dominant L-contribution is related to the formation of the core/shell structure of the nanoparticles; 8,[13][14][15][16]19,20 namely, it strongly increased with growth of the semiconducting CoFe-based oxide shell thickness.…”

Effect of Matrix onto Oxidation of Metallic Nanoparticles in Metal-Insulator Nanocomposite Films

“…Besides, oxidation of metallic cores increases electrical resistance of lms [1] and enhances the eect of negative capacitance at room temperature [2], which is favorable for designing new electronic devices for high-frequency applications. This is particularly important for current eorts towards elaboration of planar noncoil-like inductances fully compatible with microelectronic silicon planar technology.…”

Composition, structure and tribotechnical properties of TiN, MoN single-layer and TiN/MoN multilayer coatings

“…To get complete information about the elemental composition of coatings, we used a device for the Reser ford backscattering (RBS) of He + ions at energy of 1.7 MeV (scattering angle θ = 170° if probing ions fall per pendicularly on samples, the detector energy resolution is 16 keV, the dose of helium ions is 5 μCu) [26][27][28][29].…”

“…The microstructures and elemental compositions of coatings were studied using several electron-ion scan ning microscopes (Quanta 200 3D, Quanta 600 FE SEM) equipped with a detector of X ray radiation of the PEGASUS 2000 system (EDAX, USA) [26][27][28][29][30][31]. We used also a JEOL 7001F scanning electron microscope (Japan) with a microanalysis by the energy dispersive X ray spectroscopy (EDX).…”