Determination of solar cell parameters from its current–voltage and spectral characteristics

Abstract

An algorithm for the calculation of solar cell parameters (series and parallel resistance, diode coefficient, reverse current density) calculation from its current-voltage characteristics at fixed illumination intensity is proposed. The possibility of determining the p-n junction depth on the basis of spectral dependencies of diode photocurrent at different values of the applied bias voltage is shown.

Realization of high performance silicon nanowire based solar cells with large size

“…For detailed comparison, we illustrate the electrical parameters for each group in table 1 (all values are obtained as averages over each group's six samples). The reverse saturation current (I 0 ) and diode quality factor (n), which are extracted from the illuminated I-V measurements [30], can relatively represent the passivation effect because of its correspondence to the total recombination including both the Auger and SRH recombination in a solar cell [31]. We notice that in each series longer SiNW based solar cells show larger values of I 0 and n than shorter samples, indicating increases of both the Auger and SRH recombination in the n-type region.…”

The application of trust region method to estimate the parameters of photovoltaic modules through the use of single and double exponential models

“…Some methods have been proposed using measurements taken at different light levels [1] - [7], while others use light and dark conditions [8] - [13]. There are also methods that differ by the proposed analysis model, in other words, the equivalent electric circuit used for analysis.…”

Methods to determine the dc parameters of solar cells: A critical review

“…In the former case the measurements can be performed under dark or illuminated conditions, in the latter case solar simulators being used [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

“…The parameters of the solar cell such as R sh , R s , I o and n can be calculated with the method developed by Tivanov et al [11]. Considering the mathematical equation for the one diode model, which is represented by Eq.…”