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The time decay for photoluminescence (PL) emitted from silicon crystals excited by a short laser pulse has been simulated for the first time on the basis of two simplified approximations in order to obtain both bulk carrier lifetime (τb) and surface recombination velocity (S). One approximation is that the PL intensity is proportional to the normalized (averaged) excess carrier densities, whereas the other is that it is proportional to the recombination rate. We compared simulated results with experimental ones and obtained better coincidence in the case of the latter rather than the former approximation, which means that the Buczkowski et al.'s algorithm for obtaining both τb and S [J. Appl. Phys. 69 (1991) 6495] cannot be applied to the PL decay method. Therefore, a new algorithm has been developed in this present work.

Starting from a finite OED in the Johnson-Baker-Willey formulation, structures of uv divergences of (OlSlO) in QED arc analysed. To obtain the finite QED in the vacuum region several eigenvalue conditions for the bare electron charge are introduced.

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DLTS signals for midgap electron traps in LEC n-GaAs crystals were found to depend on the species of metals used for Schottky barrier contacts, aluminum and gold, and to change by annealing. SIMS analyses suggested that interfacial reaction between the contact metals and semiconductors was responsible for the change of the DLTS signals.

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By combining the effects of chemical dry etching (CDE) and sacrificial oxidation, a smooth trench sidewall surface with a root-mean-square (Rms) roughness of less than 1 nm was obtained. The possibility of obtaining a smooth surface such as that of a planar metal-oxide-semiconductor (MOS) by increasing both the CDE etching time and the oxide thickness of sacrificial oxidation appears likely.