Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs Crystals

Yahata, Akihiro; Nakajima, Masahiro

doi:10.1143/jjap.23.l313

Cited by 29 publications

(4 citation statements)

References 4 publications

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“…These trap parameters are almost the same as those of ETX-2 and ETX-3 in reference [13]. The existence of more than two midgap levels were also reported by other research groups [15,16]. b) Steady state photocapacitance measurements.…”

supporting

confidence: 82%

EL2 family in LEC and HB GaAs

Mochizuki

Ikoma

1988

Rev. Phys. Appl. (Paris)

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Studies on the electrical and optical properties of EL2 in various GaAs crystals are described especially in view of the family characteristics. A variation in the trap energy levels among the EL2 family is first reviewed. It is shown that the family characteristics are also observed in the photoquenching effect (transitions between the normal and the metastable states) as well as the transition rate to the excited state. Change of EL2 centers after heavy particle bombardment and low temperature annealing indicate that the defect structure responsible for EL2 is sizable, in which mobile interstitial As atom(s) are involved. Based on the experimental results, validity of the As-cluster model for the origin of EL2 is presented and correlated with the models proposed by other investigators

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supporting

confidence: 82%

EL2 family in LEC and HB GaAs

Mochizuki

Ikoma

1988

Rev. Phys. Appl. (Paris)

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“…1, which is characterized by a small unresolved peak ͑shoulder͒ on either side of it. 5,[9][10][11][12][13][14] The shoulder peaks C and E are resolvable from EL6 through a nonlinear curve-fitting program, and the activation energies are determined as 0.278 Ϯ0.008 and 0.403Ϯ0.007 eV, which again using the Martin, Mitonneau, and Mircea classification are identified as EL7 and EL5, respectively. 8 Finally, peak F, with an activation energy of 0.62Ϯ0.01 eV and with a very low concentration, is identified with EL3.…”

Section: Resultsmentioning

confidence: 99%

“…The sequence of deep levels seen in our REF sample as EL5, EL6, EL7 are often referred to as the EL6 group, because they occur in close proximity to each other and are nearly always present together in the as-grown material. [9][10][11][12][13][14]19 Indeed there seems to be growing evidence that these three levels are not due to separate defects but different electronic states of the same atomic configuration. Recently Shiraki, Tokuda, and Sassa showed a close interaction between the EL5 and EL6 levels in bulk grown n-type GaAs, the intensity of the EL5 level increasing relative to EL6 according to the filling pulse duration on the time scale of seconds.…”

Section: El6 Groupmentioning

confidence: 99%

Nature of the bulk defects in GaAs through high-temperature quenching studies

1996

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Deep-level transient spectroscopy has been applied to n-type horizontal gradient freeze grown GaAs that has been subjected to thermal stressing ͑quenching͒ and varying degrees of arsenic outdiffusion during rapid thermal annealing. The concentrations and activation energies of the various deep donor levels have been monitored. As a result of the external excitations in the lattice due to the thermal stress ͑quenching͒, dramatic effects occur in the defect level structure that could be of importance to device technology. It is found that the native EL6 group of defects is nearly absent in rapid thermally annealed material, while the levels EL5 and EL8 appear with EL3 becoming a dominant level that could act as a recombination center. With the lengthening of annealing time and significant As outdiffusion, there is a general reduction of the EL2, EL3, and EL5 defect concentrations together with a complete removal of EL8. Moreover, the EL2 activation energy may be varied from 0.827 to 0.922 eV by controlling the level of As out-diffusion. These observations are discussed in terms of the As Ga-As i model of the EL2 defect and the V As-V Ga divacancy model for the EL6 group of defects. The EL3, EL5, EL8, and EL15 defect levels seen in samples subjected to rapid thermally quenching are attributed to the breakup of V As-As i Frenkel pair defects known to be present in the as-grown material. ͓S0163-1829͑96͒01240-4͔

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“…Schottky barrier diodes when the surface state density is large [25,26] and also in neutron irradiated samples (see following sub-section) [16]. Initially, the U peak has been associated to a band of defects [27].…”

mentioning

confidence: 99%

EL2-related studies in irradiated and implanted GaAs

Guillot

1988

Rev. Phys. Appl. (Paris)

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Résumé. 2014 Le donneur profond EL2 est un défaut très important par le rôle qu'il joue dans la compensation du matériau GaAs semi-isolant non dopé. La Abstract. 2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also ion implantation followed or not by annealing. These studies have greatly contributed in specifying the nature of EL2 namely a complex intrinsic defect with an arsenic antisite as a core (AsGa + X). We point out some new concepts such as hopping transitions due to interdefect electron tunnelling which have been tentatively proposed to account for observations in implanted and neutron irradiated samples. We also discuss the main results of these artificial creation experiments as a function of the recent models proposed for EL2 up to the present day.

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Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs Crystals

Cited by 29 publications

References 4 publications

EL2 family in LEC and HB GaAs

EL2 family in LEC and HB GaAs

Nature of the bulk defects in GaAs through high-temperature quenching studies

EL2-related studies in irradiated and implanted GaAs

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