Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices

Kinoshita, K.; Hatakeyama, Tatsuko; Takikawa, Osamu; Yahata, Akihiro; Sügimura, Takashi

doi:10.1109/ispsd.2002.1016219

Cited by 17 publications

(15 citation statements)

References 1 publication

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“…Many works were reported on edge termination of SiC SBD to achieve high breakdown voltages [2,15,51,63,[95][96][97][98][99][100][103][104][105][106][107][108][109][110][111][112][113][114][115][116][117][118][119]]. 1 1 1990 1992 1994 1996 1998 2000 2002 2004 2006 Year Fig.…”

Section: Termination Techniquesmentioning

confidence: 99%

“…However, Boron or Arsenic implanted edge termination may result in lower long term reliability of the SBD believed to be caused by the trapping effect of the defects in the implanted region. In [117], a method combining the floating guard ring and the RESURF effect was adopted (Fig. 12.e) and found to be able to achieve a good breakdown voltage (~1.2kV) for a wide range of implantation doses.…”

Section: ---]---mentioning

confidence: 99%

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Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Section: Termination Techniquesmentioning

confidence: 99%

Section: ---]---mentioning

confidence: 99%

Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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“…In recent years, several advanced edge terminations have been proposed that were intended to increase the robustness of the edge terminations against design and process variations, and to reduce the device area and process complexity. For example, guard ring assisted JTE (GAJ) [1], [5] and space-modulated JTE [6], [7] were both designed to enlarge the JTE dose tolerance window. In [8], the potential of a novel edge termination structure, counter-doped JTE (CD-JTE), was shown through simulation.…”

Section: Introductionmentioning

confidence: 99%

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Jiang

Hsu

Chu

et al. 2015

IEEE Electron Device Lett.

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In this paper, a counter-doped junction termination extension (CD-JTE) structure was experimentally implemented and studied. Two groups of 4H-SiC PiN diodes were fabricated with two n-type drift layer thicknesses of 11 μm and 30 μm respectively, and with different termination structures, in order to demonstrate the wide JTE dose tolerance of CD-JTE. Three different doses, 1.7×10 13 cm -2 , 2.2×10 13 cm -2 , and 2.8×10 13 cm -2 , were used for the critical JTE implantation. The measured breakdown voltages (BV) of the diodes with all termination structures and JTE doses were compared with simulation predictions. Electroluminescence (EL) at the breakdown voltage was recorded and used to locate the peak electrical field. The test results matched well with simulation. As a result of the effectiveness and robustness of the CD-JTE, the best achieved BVs from the diodes on the 11 μm and 30 μm epi-layers were 1850 V and 4800 V, respectively.

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“…Here, a guard-ring-assisted JTE plus outer-rings (GA-JTE-OR) structure is adopted for our designed FJ device [20]. This choice mainly arises from two aspects.…”

Section: Design and Analysis Of The Termination Structure For The mentioning

confidence: 99%

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

et al. 2020

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This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30µm, 6×10 15 cm −3-doped epitaxial layer. Extensive simulations have been performed to design, optimize and analyze the structure of the FJ_JBS rectifier. The fabricated FJ_JBS shows that breakdown voltage (BV) and differential R on,sp are 3.4 kV, yielding the highest BV value reported for 4H-SiC FJ diodes, and 5.67 m •cm 2 , respectively. Compared with the conventional JBS, the BV value of FJ_JBS increases by 33.3% and the R on,sp only slightly rises by 6.2%. The corresponding Baliga figure-of-merit (BFOM) (4 BV 2 /R on−sp) of this FJ_JBS diode is 8.16 GW/cm 2. INDEX TERMS 4H-SiC, FJ structure, JTE termination, FJ_JBS.

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Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices

Cited by 17 publications

References 1 publication

Silicon Carbide Schottky Barrier Diode

Silicon Carbide Schottky Barrier Diode

Experimental Study of Counter-Doped Junction Termination Extension for 4H–SiC Power Devices

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

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