Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy

Abstract

Starting from a finite OED in the Johnson-Baker-Willey formulation, structures of uv divergences of (OlSlO) in QED arc analysed. To obtain the finite QED in the vacuum region several eigenvalue conditions for the bare electron charge are introduced.

Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films

“…23 and 24͒ and micrometer-thick SiO 2 layers sputtered onto PMMA films at room temperature. 25 There has been little research on examining a possible relationship between plasma-induced modified layer formation and nanoscale surface and line edge roughness 26,27 that is relevant to polymer resists exposed to pattern transfer plasmas. Such a fundamental connection would have profound consequences on our ability to fabricate three-dimensional nanoscale structures and would assist in establishing new design criteria for reducing the minimum feature size in microelectronics processing.…”

Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography

“…1 In addition, it is well known that roughness adversely affects the performance of transistor devices, but it has also been shown to adversely affect the performance of optical devices, such as waveguides 2 manufactured with semiconductor techniques. Therefore, controlling and minimizing the sidewall roughness of resist features is of increasing importance as device sizes continue to decrease.…”

Direct measurement of x-ray mask sidewall roughness and its contribution to the overall sidewall roughness of chemically amplified resist features

“…Superimposed on these depth-wise columns and grooves is the roughness associated with the photoresist itself. 12,13 Both the TaSi mask and the resist PSD curves for the sidewalls have a peak in the PSD curves corresponding to a spatial frequency of 0.8 m. The intensity of this peak is slightly larger for the mask surfaces. These columns and grooves are larger than the high frequency roughness of the photoresist and the higher frequency columns and grooves seen on the absorber sidewall.…”