An improved design of silicon-on-insulator based 8 × 8 AWG multiplexer is presented using tapered entry into the slab waveguide. Our simulation result clearly shows significant enhancement of electric field from 0.44 V/m to 0.732 V/m, reduction in insertion loss from 7.13 db to 2.7 db, with bandwidth of 230 GHz and channel spacing 200 GHz while keeping other parameters within acceptable limits.
The preselll paper deals with the material and device design. tec/moloR), alld recelll reslIlts 011 the performance of 980 /IIllfaser diodes developed at CEERI. The issues refated to material stnfcfllre, device design and optimised process parameters Orr! discltssed. Typical L-I characteristics of these devices and important device parameters slIch as threshold Cllrrellt. em;.uioll wavelength alld slope efficiency are inelll(led and discl/ssed.
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