High Power 980-nm in GaAs/AlGaAs Strained Quantum Well Lasers for Pumping Applications

Abstract

The preselll paper deals with the material and device design. tec/moloR), alld recelll reslIlts 011 the performance of 980 /IIllfaser diodes developed at CEERI. The issues refated to material stnfcfllre, device design and optimised process parameters Orr! discltssed. Typical L-I characteristics of these devices and important device parameters slIch as threshold Cllrrellt. em;.uioll wavelength alld slope efficiency are inelll(led and discl/ssed.