Gas sensors for Internet of Things applications should meet two requisites—low power consumption and easy mounting universally. To satisfy the conditions, gas sensors need to operate at lower temperature and...
Grain
enlargement is a crucial requirement to synthesizing two-dimensional
(2D) metal chalcogenides because it can minimize the effects of carrier
scattering at the grain boundaries. To this end, researchers have
used a high processing temperature to enlarge grains, which makes
it difficult to implement novel electronics employing 2D metal chalcogenides.
This work proposes an alternative method to enlarge grains of 2D SnS
at low temperatures via ligand-mediated surface modification. A priming
method using hexamethyldisilazane vapor makes the substrate surface
inert via the replacement of a functional group with a methyl group.
Atomic layer deposition is performed at low temperatures (<300
°C) to grow the SnS grains. The grains exhibit small irregular
shapes of approximately 200 nm when grown on pristine SiO2, but show single-crystalline and rectangular shapes of approximately
1 μm when formed on hexamethyldisilazane-primed SiO2. Such a morphological change is attributed to the increase in the
surface diffusivity of the adsorbate, resulting from the decrease
in the surface migration activation barrier via surface modification.
This approach may provide the possibility of employing 2D metal chalcogenides
in future electronics, which requires strictly low-temperature processing.
Atomic layer deposition (ALD) is considered a promising growth technique for transition metal dichalcogenides (TMDCs) because it ensures uniformity and homogeneity of the TMDC grains. However, the poor crystallinity of...
Atomic layer deposition (ALD) is a technique based on the surface reaction of precursors; thus, it strongly depends on the surface states of the substrate. We demonstrate significant changes in...
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