Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films

Cho, Ah-Jin; Jeon, Jonggu; Chung, Hyun Kee; Baek, In‐hwan; Yang, Kyounghoon; Park, Min Hyuk; Baek, Seung‐Hyub; Kim, Seong Keun

doi:10.1016/j.ceramint.2021.10.102

Cited by 8 publications

(4 citation statements)

References 30 publications

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“…To induce a high level of ferroelectricity in HZO-based films, a variety of strategies have been conducted, such as modulation of surface energy contribution [12,13], the introduction of mechanical (or electrical) stress [14], elemental doping (e.g. Al, Sr et al) [15,16], and the control of oxygen source and oxygen contribution [17,18]. Among these investigations, it is well known the oxygen concentration in HZO films which determine the formation of V O have been proposed and studied as a main factor affecting the ferroelectricity in HZO-based films [19].…”

Section: Introductionmentioning

confidence: 99%

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Yang,

Xie,

Zhu

et al. 2024

Nanotechnology

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In recent times, there has been a notable surge of interests in hafnia (HfO2)-based ferroelectrics, primarily due to their remarkable ferroelectric properties employed in ultra-thin configurations, alongside their compatibility with the conventional CMOS manufacturing process. In order to harness the full potential of HfO2-based films for high-performance non-volatile memory applications, it is imperative to enhance their ferroelectric characteristics and durability. This study introduces a straightforward approach aimed at augmenting the ferroelectric performance of HfxZr1-xO2 (HZO) films deposited on silicon (Si) substrates through the engineering of oxygen vacancies (VO). The results of this endeavor demonstrate a significant enhancement in ferroelectric performance, characterized by a 2Pr value of 47 µC/cm2 and impressive endurance, enduring up to 108 cycles under an 8 MV/cm electric field without the need of a wake-up process. This marked improvement can be attributed to a dual-pronged approach, involving the incorporation of an Al2O3 interlayer and the introduction of Al atoms into the HZO film. The Al2O3 interlayer primarily serves to mitigate the presence of oxygen vacancies at the interface, while the introduction of Al dopants elevates the concentration of oxygen vacancies within the bulk material. This modulation of oxygen vacancy concentration proves instrumental in facilitating the formation of a ferroelectric oⅢ phase within the HZO-based films, thereby further augmenting their ferroelectric performance. This innovative and effective strategy offers an alternative avenue for enhancing the ferroelectric properties of materials characterized by a fluorite crystal structure.

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Section: Introductionmentioning

confidence: 99%

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Yang,

Xie,

Zhu

et al. 2024

Nanotechnology

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“…To this end, an analytical DIBL model obtained using the 2D solution of Poisson's equation will be presented and the validity of this model will be demonstrated. In particular, a junctionless channel structure developed to simplify the process according to the decrease in channel length will be used, and HZO will be used as the ferroelectric material [18][19]. Since the remanent polarization Pr and coercive field Ec of HZO are the main factors determining the NC, the effect of these two factors on DIBL will be considered.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Drain-Induced Barrier Lowering for Gate-All-Around FET with Ferroelectric

Hakkee Jung

2024

Int. j. eng. technol. innov.

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This study presents an analytical model for the drain-induced barrier lowering (DIBL) of a junctionless gate-all-around FET with ferroelectric, utilizing a 2D potential model. A multilayer structure of metal-ferroelectric-metal-insulator-semiconductor is used as the gate, as well as the remanent polarization and coercive field values corresponding to HZO are used. The DIBLs obtained with the proposed model demonstrate good agreement with those obtained using the second derivative method, which relies on the 2D relationship between drain current and gate voltage. The results demonstrate that an increase in ferroelectric thickness leads to a negative DIBL value due to the ferroelectric charge. Additionally, there exists an inverse relationship between ferroelectric thickness and channel length to achieve a DIBL value of 0. This condition is satisfied only with the increase of the ferroelectric thickness as the channel radius and insulator thickness increase. The DIBLs increase with higher remanent polarization and lower coercive field, remaining constant when the ratio of remanent polarization and coercive field is maintained.

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“…The HfO 2 −ZrO 2 solid solution (HZO) has been widely studied because of its wide allowable doping concentration and low annealing temperature (<500 °C), which has expanded its compatibility with the back-end process. 5,6 The combination of excellent ferroelectricity and mature process make it a promising candidate for nonvolatile memories (NVMs), 7 negative capacitance devices, 8 and neuromorphic computation. 9 The ferroelectricity of HfO 2 is only induced by the orthorhombic phase (o-phase, Pca21).…”

Section: Introductionmentioning

confidence: 99%

“…However, the conventional perovskite type (such as PZT and BTO) is not widely used due to the difficulty in CMOS compatibility and scalability. , The discovery of ferroelectricity in Si-doped hafnium oxide (HfO 2 ) thin films in 2011 has renewed interest in hafnium-based ferroelectric thin films and related applications because of its significant advantages of CMOS compatibility, switching speed, and size scaling potential. The HfO 2 –ZrO 2 solid solution (HZO) has been widely studied because of its wide allowable doping concentration and low annealing temperature (<500 °C), which has expanded its compatibility with the back-end process. , The combination of excellent ferroelectricity and mature process make it a promising candidate for nonvolatile memories (NVMs), negative capacitance devices, and neuromorphic computation …”

Section: Introductionmentioning

confidence: 99%

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf_0.5Zr_0.5O₂ Thin Films

Wang

Wen

et al. 2023

ACS Appl. Mater. Interfaces

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It is commonly believed that the impact of the top electrodes on the ferroelectricity of hafnium-based thin films is due to strain engineering. However, several anomalies have occurred that put existing theories in doubt. This work carries out a detailed study of this issue using both theoretical and experimental approaches. The 10 nm Hf0.5Zr0.5O2 (HZO) films are prepared by atomic layer deposition, and three different top capping electrodes (W/MO/ITO) are deposited by physical vapor deposition. The electrical testing finds that the strain does not completely control the ferroelectricity of the devices. The results of further piezoelectric force microscopy characterization exclude the potential interference of the top capping electrodes and interface for electrical testing. In addition, through atomic force microscopy characterization and statistical analysis, a strong correlation between the grain size of the top electrode and the grain size of the HZO film has been found, suggesting that the grain size of the top electrode can induce the formation of the grain size in HZO thin films. Finally, the first-principles calculation is carried out to understand the impact of the strain and grain size on the ferroelectric properties of HZO films. The results show that the strain is the dominant factor for ferroelectricity when the grain size is large (>10 nm). However, when the grain size becomes thinner (<10 nm), the regulation effect of grain sizes increases significantly, which could bring a series of benefits for device scaling, such as device-to-device variations, film uniformity, and domain switch consistency. This work not only completes the understanding of ferroelectricity through top electrode modulation but also provides strong support for the precise regulation of ferroelectricity of nanoscale devices and ultrathin HZO ferroelectric films.

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Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films

Cited by 8 publications

References 30 publications

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Analysis of Drain-Induced Barrier Lowering for Gate-All-Around FET with Ferroelectric

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf_0.5Zr_0.5O₂ Thin Films

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Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films

Cited by 8 publications

References 30 publications

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping

Analysis of Drain-Induced Barrier Lowering for Gate-All-Around FET with Ferroelectric

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

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Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf_0.5Zr_0.5O₂ Thin Films