Atomic layer deposition (ALD) is considered a promising growth technique for transition metal dichalcogenides (TMDCs) because it ensures uniformity and homogeneity of the TMDC grains. However, the poor crystallinity of...
As semiconductor devices are miniaturized (to dimensions of nanometers), the accurate alignment of each layer on the desired location poses a challenge in the fabrication of multilayer-stacked devices. Area-selective deposition has attracted interest in resolving alignment issues in nanoelectronics. Herein, we demonstrate the area-selective atomic layer deposition (ALD) of SnS2, a promising two-dimensional channel material for the application of back-end-of-line (BEOL)-compatible transistors, on SiO2 (growth area) and Al2O3 (nongrowth area). We employed a super cycle comprising acetylacetone injection as an inhibitor, SnS ALD cycles, and H2S plasma for the area-selective deposition of SnS2. Although SnS ALD possesses good selectivity, the H2S plasma used for the transformation of SnS to SnS2 deteriorated the Al2O3 surface and resulted in nucleation in the nongrowth area. The acetylacetone injection in the super cycle was selectively adsorbed by Al2O3 and protected it from the H2S plasma. The synergistic effects of the selectivity of the SnS ALD process and protection of the Al2O3 surface exhibited excellent selectivity for SnS2. In the super cycle, the increase in the number of SnS cycles enhanced growth incubation on Al2O3 and induced the appearance of the SnS phase on SiO2 as the growth area. By optimizing the super-cycle conditions, ∼7 nm of selective SnS2 deposition was achieved on Al2O3 and SiO2. The proposed strategy will help enhance the area-selective deposition technology for two-dimensional semiconductors in BEOL-compatible transistors.
The study investigates the mitigation of radiation damage on p‐type SnO thin film transistors (TFTs) with a fast, room temperature annealing process. Atomic layer deposition was utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2x1012 ions/cm2, the output drain current and on/off current ratio (Ion/Ioff) decreased by more than one order of magnitude, field‐effect mobility (μFE) reduced more than four times, and sub‐threshold swing (SS) increased more than 4 times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). We demonstrate a technique to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low duty cycle high density pulsed current. At a pulsed current density of 4.0x105 A/cm2, we observed approximately four times increase in Ion/Ioff, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs suggesting effectiveness of the new annealing technique.This article is protected by copyright. All rights reserved.
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