Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect transistors (TFETs) are fabricated. Tilted dopant implantation using the gate as a shadow mask allows self-aligned formation of p-i-n TFETs. The steep junctions formed by dopant segregation at low temperatures improve the band-to-band tunneling, resulting in higher oncurrents of n- and p-TFETs of >10 μA/μm at VDS = 0.5 V. The subthreshold slope for n-channel TFETs reaches a minimum value of 30 mV/dec, and is <60 mV/dec over one order of magnitude of drain current. The first sSi NW complementary TFET inverters show sharp transitions and fairly high static gain even at very low VDD = 0.2 V. The first transient response analysis of the inverters shows clear output voltage overshoots and a fall time of 2 ns at VDD = 1.0 V

We address a discrepancy between different computations of η/s (shear viscosity over entropy density) of hadronic matter. Substantial deviations of this coefficient are found between transport approaches mainly based on resonance propagation with finite lifetime and other (semi-analytical) approaches with energy-dependent cross-sections, where interactions do not introduce a timescale. We provide an independent extraction of this coefficient by using the newly-developed SMASH (Simulating Many Accelerated Strongly interacting Hadrons) transport code, which is an example of a mainly resonance-based approach. We compare the results from SMASH with numerical solutions of the Boltzmann equation for simple systems using the Chapman-Enskog expansion, as well as previous results in the literature. Our conclusion is that the hadron interaction via resonance formation/decay strongly affects the transport properties of the system, resulting in significant differences in η/s with respect to other approaches where binary collisions dominate. We argue that the relaxation time of the system -which characterizes the shear viscosity-is determined by the interplay between the mean-free time and the lifetime of resonances. We show how an artificial shortening of the resonance lifetimes, or the addition of a background elastic cross section nicely interpolate between the two discrepant results. arXiv:1709.03826v1 [nucl-th]

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We prove a set of identities for the anomalous dimensions of the quark and gluon conformal operators in the flavour singlet channel in QCD. These relations arise from the graded commutator algebra of the N = 1 superconformal group. We evaluate the rotation matrices for the quantities under study from the conventional dimensional regularization to the supersymmetry preserving regularization scheme. Using them we verify the equalities in two-loop approximation employing the results for the NLO anomalous dimensions of the conformal operators in the minimal subtraction scheme derived earlier.

We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO3 films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k33), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%—from 11.5 W m−1K−1 for stoichiometric homoepitaxial SrTiO3 to 2 W m−1K−1 for strontium-rich homoepitaxial Sr1+δTiOx films—by incorporating (SrO)2 Ruddlesden-Popper planar defects.

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