There a r e many Considerable discrepancies in the literature data concerning the optical properties of gallium antimonide crystals /1 to 3 / . The complexity of studying the gallium antimonide crystals i s increased by the presence of a very low second minimum of the conduction band lying only by 0.08 eV higher than the bottom of the main minimum. Below this minimum doping with various admixtures involves the formation of levels whose energetic positions substantially depend on the kind of admixture / 4 , 5/.In the present paper the dependence of the forbidden optical band gap in tellurium and selenium doped gallium antimonide crystals is studied. The investigations were carried out at 77 and 300 K.The experimental values of the forbidden optical band gap were determined from the spectral dependence of the absorption coefficient in the region of the fundamental band edge. The theoretical calculations were carried out with strict account of the influence of doping on the width of the forbidden band and the Fermi level position / 6 , 7 / .The results of comparing the experimental and the theoretically calculated valhes a r e given in Fig. 1, 2. These figures show that agreement between experiment and theory exists only at concentrations not greater than x. 5x10 17 -3 cm at 300 K and -3 7 x 1 0~~ c m at 77K. At higher concentrations the experimental dependences nium doped crystals differs quite distinctly. 25 A 1 085 -,F ' x E = f(n) greatly differ from the theoretically calculated ones. The behaviour of E O P = f(n) for tellurium and sele-O P $4 , x us 080 k Fig. 1. Dependence of Ecally calculated dependence is shown by a continuous line = f(n) for crystals doped with 0 75 tellurium (-+) and selen@m (-X-) at 77 K. The theoreti-7o17 loB 1oJ9 n (~17131-
The present note reports results of a thorough research of the Moss-Burstein effect in n-type indium arsenide crystals, containing different donor admixtures.The shift of the absorption edge to shorter wavelengths with increasing doping has been repeatedly /1, 2/ observed in indium arsenide crystals. As a rule the obtained experimental results were quite well explained by means of the Kane /3/ band model with the Burstein /4/ effect taken into account.However, while studying optical /S/ and other phenomena / 6 , ?/in indium antimonide some dependence of the various effects Qn the type of the doping admixture
Absorption spectra in indium arsenide and indium antimonide crystals are investigated at temperatures 77 and 300 K. Theoretical calculations are made in strict compliance with Kane's band model and the influence of the doping degree on the forbidden band width. The investigations performed show that the spectral dependence of the absorption coefficient is in good agreement with Kane's band model for the whole interval of the concentrations investigated.
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