Moss-burstein effect in n-type crystals of indium antimonide

Filipchenko, A. S.; Naurizbaev, A.

doi:10.1002/pssa.2210370252

Cited by 6 publications

(1 citation statement)

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“…Furthermore, the increase in Co dopant content leads to increasing the deficiency, which leads to an increase in the average atomic distance, thus leading to a decrease in the energy level spacing. For linear absorption, we have Tacu's formulation, which is given as follows (Filipchenko and Naurizbaev, 1976):…”

Section: Morphological and Optical Analysismentioning

confidence: 99%

Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

et al. 2021

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Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

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Section: Morphological and Optical Analysismentioning

confidence: 99%

Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

et al. 2021

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Moss-burstein effect in n-type gallium antimonide crystals

Filipchenko

Bolshakov

Naurizbaev

et al. 1978

Phys. Stat. Sol. (a)

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There a r e many Considerable discrepancies in the literature data concerning the optical properties of gallium antimonide crystals /1 to 3 / . The complexity of studying the gallium antimonide crystals i s increased by the presence of a very low second minimum of the conduction band lying only by 0.08 eV higher than the bottom of the main minimum. Below this minimum doping with various admixtures involves the formation of levels whose energetic positions substantially depend on the kind of admixture / 4 , 5/.In the present paper the dependence of the forbidden optical band gap in tellurium and selenium doped gallium antimonide crystals is studied. The investigations were carried out at 77 and 300 K.The experimental values of the forbidden optical band gap were determined from the spectral dependence of the absorption coefficient in the region of the fundamental band edge. The theoretical calculations were carried out with strict account of the influence of doping on the width of the forbidden band and the Fermi level position / 6 , 7 / .The results of comparing the experimental and the theoretically calculated valhes a r e given in Fig. 1, 2. These figures show that agreement between experiment and theory exists only at concentrations not greater than x. 5x10 17 -3 cm at 300 K and -3 7 x 1 0~~ c m at 77K. At higher concentrations the experimental dependences nium doped crystals differs quite distinctly. 25 A 1 085 -,F ' x E = f(n) greatly differ from the theoretically calculated ones. The behaviour of E O P = f(n) for tellurium and sele-O P $4 , x us 080 k Fig. 1. Dependence of Ecally calculated dependence is shown by a continuous line = f(n) for crystals doped with 0 75 tellurium (-+) and selen@m (-X-) at 77 K. The theoreti-7o17 loB 1oJ9 n (~17131-

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