In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations. Design examples of passive devices operating at 5 and 6 GHz in a commercial HBT BiCMOS process are also presented. The parallel resonator quality factor is computed as a function of inductor L capacitor C and their respective losses R SL and R SC .
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