Passive On‐Chip Components for Fully Integrated Silicon RF VCOs

Abstract

In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations. Design examples of passive devices operating at 5 and 6 GHz in a commercial HBT BiCMOS process are also presented. The parallel resonator quality factor is computed as a function of inductor L capacitor C and their respective losses R SL and R SC .

Mixed-Mode Device Modeling of DGMOS RF Oscillators

“…VCOs are implemented in silicon-based technologies which are mainly realized as differential cross-coupled topologies due to the poor substrate isolation properties of silicon based technologies. Their efficiency is low because in addition to the oscillator core, an output buffer is needed [1][2][3]. Phase and frequency fluctuations have therefore been the subject of numerous studies [4][5][6][7][8][9].…”