На основе решеточно-согласованных гетероструктур GaInAsP/InP, полученных газофазной эпитаксией из металлоорганических соединений, разработаны фотоэлектрические преобразователи лазерного излучения с засветкой со стороны подложки. Рассмотрены варианты просветляющих покрытий с минимумом отражения при длинe волны λ = 1064 нм, а также особенности монтажа чипов с использованием паяльных паст с различающимися температурами плавления. В условиях равномерного облучения для мощности 1.2 Вт на фотопреобразователях площадью 3.5 × 3.5 мм 2 получен кпд 34.5% (λ = 1064 нм).
The photoluminescent properties at 77 and 300 K are investigated for Ga1 xInxAsyP1 y epilayers with V-group elements content gradient Δy up to 0.08 across whole thickness (about 1 µm). Ga1 xInxAsyP1 y layers with high Δy values have widened photoluminescence spectra. For GaInAsP layers of low crystaline perfection, photoluminescence was either absent or manifested itself as it is typical for transitions involving impurity levels.
The paper presents the results of using sub-contact layers with a band gap from 0.35 to 0.8 eV to obtain low-resistance electrical contacts to p-InP. An experimental dependence of the contact resistance on the band gap of the sub-contact material In(x)Ga(1-x)As is obtained.
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