1993
DOI: 10.1063/1.109583
|View full text |Cite
|
Sign up to set email alerts
|

ZnSe-ZnCdSe quantum confined Stark effect modulators

Abstract: We report room temperature operation of a II-VI p-i-n quantum confined Stark effect modulator using a ZnSe-Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p-n junction. A n-type ZnSe layer was used as a novel contact to the p-type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
11
0

Year Published

1995
1995
2006
2006

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 50 publications
(11 citation statements)
references
References 13 publications
0
11
0
Order By: Relevance
“…This new structure device exhibits a strong coupling of the electron envelope wavefunctions and a large Stark shift of ∆E ∼ 28 meV at room temperature. This field enhanced Stark shift is found to be superior to the usual heavy-hole-resonant type ACQW (∆E ∼ 21 meV), which is consistent with the theoretical simulation based on the effective mass approximation.1 Introduction A quantum confined Stark effect (QCSE) of excitonic transition is attracting for optical functional devices such as high speed light modulators, switches or self electro-optic effect devices (SEEDs) [1,2]. The exciton binding energy in theII-VI widegap semiconductors is much larger than that of III-V compounds, and therefore, these widegap compounds have a large potential for QCSE devices in new short wavelength region.…”
mentioning
confidence: 54%
“…This new structure device exhibits a strong coupling of the electron envelope wavefunctions and a large Stark shift of ∆E ∼ 28 meV at room temperature. This field enhanced Stark shift is found to be superior to the usual heavy-hole-resonant type ACQW (∆E ∼ 21 meV), which is consistent with the theoretical simulation based on the effective mass approximation.1 Introduction A quantum confined Stark effect (QCSE) of excitonic transition is attracting for optical functional devices such as high speed light modulators, switches or self electro-optic effect devices (SEEDs) [1,2]. The exciton binding energy in theII-VI widegap semiconductors is much larger than that of III-V compounds, and therefore, these widegap compounds have a large potential for QCSE devices in new short wavelength region.…”
mentioning
confidence: 54%
“…The maximum modulation depth is 51% with transmission configuration, and the devices show very stable operation. Differential absorption coefficients ∆α between reverse bias of 0 and 24 V are −26000 cm −1 at the ground state exciton resonance (E e1−hh1 ), and +11500 cm −1 in transparent region below the ground state, which is promising for practical waveguide optical modulators for the short wavelength.1 Introduction A quantum confined Stark effect (QCSE) of excitonic transition is attracted for optical functional devices such as high speed light modulators, switches or self electro-optic effect devices (SEEDs) [1,2]. In these optical devices, high electric-field induced excitonic Stark effect plays essential role, where large Stark shift without exciton dissociation must be realized.…”
mentioning
confidence: 99%
“…,3 and 4 , we have calculated the eigenstates of the quantum wells by means of the envelope function method within the effective mass approximation. The band offsets and strain effects were computed according to Van de Walle's model-solid theory9"°.…”
mentioning
confidence: 99%