<title>Photocurrent spectrum of p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures</title>

Abstract

Photocurrent spectrum (PC) is reported both at room temperature and at 77K on p-i-n Zn1_CdSe/ ZnSe multiple quantum well heterostructures (x-O. 12) grown by molecular beam epitaxy. Almost all the exciton transitions , allowed and forbidden , associated with the two lowest electron and three highest hole subbands are clearly observed. With the increase of well width from 22A to 54A , an evolution of excitonic structure in PC spectra is demonstrated. Theoretical calculations show a quite good agreement with the measurement results , and from the comparison between theory and experiment , an exiton binding energy for heavy hole of 28meV, and for light hole of 20meV are obtained for this type of quantum wells.