Growth and electrical property of conductive Sn‐doped α‐Ga2O3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported α‐Ga2O3 films on c‐plane sapphire, highly crystalline α‐Ga2O3 films on m‐plane sapphire substrates are grown by applying two‐step growth procedure. Carrier concentration of Sn‐doped α‐Ga2O3 films is controlled in the range of 1017–1019 cm−3 by changing the Sn/Ga concentration ratio in source solution. α‐Ga2O3 films on m‐plane sapphires with the thickness of 2 μm show mobilities as high as 65 cm2 (V s)−1, which is much higher than previously reported value of 24 cm2 (V s)−1 in the films grown on c‐plane sapphire.
A high-field operation of p+–n structure blue-ultraviolet photodetectors has been studied using ZnSe-based II–VI wide-band-gap compound semiconductors grown by molecular-beam epitaxy (MBE). With an improved crystal quality on macrodefects (dislocations and stacking faults) during an initial MBE growth as well as an optimized device structure including a complete superlattice ohmic-contact layer, a stable high electric-field operation up to 8×105 V/cm is established. It is demonstrated that the p+–n ZnSe photodiodes have shown a stable avalanche-photodiode operation with a large avalanche gain of G=60 in the blue-ultraviolet region at room temperature.
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