Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors

Ishikura, Hitoshi; Abe, Tomoki; Fukuda, Nariyuki; Kasada, Hirofumi; Ando, Koshi

doi:10.1063/1.125941

Applied Physics Letters

2000

DOI: 10.1063/1.125941

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Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors

Hitoshi Ishikura

Tomoki Abe

Nariyuki Fukuda

et al.

Abstract: A high-field operation of p+–n structure blue-ultraviolet photodetectors has been studied using ZnSe-based II–VI wide-band-gap compound semiconductors grown by molecular-beam epitaxy (MBE). With an improved crystal quality on macrodefects (dislocations and stacking faults) during an initial MBE growth as well as an optimized device structure including a complete superlattice ohmic-contact layer, a stable high electric-field operation up to 8×105 V/cm is established. It is demonstrated that the p+–n ZnSe photod… Show more

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Cited by 37 publications

(16 citation statements)

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“…ZnSSe APDs show very low-voltage operation at around reverse bias of ~ 30 V [1], which is originated from the band structure of ZnSe [15] with very small impact ionization threshold energy and very small effective mass of spin-orbital split-off valence band. This low APD operation voltage is a very important point for the device full integration.…”

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confidence: 99%

“…In these widegap compounds, ZnSe is a strong candidate for ultraviolet sensing, because a high quality ZnS x Se 1−x (x = 0.055~0.06) can be grown on GaAs substrate in perfect lattice matching condition, which enable to achieve very low dark current essentially required for practical APDs. Utilizing ZnSSe/GaAs system, we have studied ZnSSebased APD [1][2][3][4][5][6], grown by molecular beam epitaxy (MBE) on GaAs.…”

mentioning

confidence: 99%

“…Therefore, semiconductor based UV-APD is attracted in new short wavelength solid-device photodetectors as an alternative to PMTs. The UV-APD has been studied using wide bandgap semiconductors of ZnSe [1][2][3][4][5][6], GaN [7][8][9][10][11], SiC [12][13][14]. In these widegap compounds, ZnSe is a strong candidate for ultraviolet sensing, because a high quality ZnS x Se 1−x (x = 0.055~0.06) can be grown on GaAs substrate in perfect lattice matching condition, which enable to achieve very low dark current essentially required for practical APDs.…”

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confidence: 99%

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Development of ZnSe‐based organic–inorganic hybrid UV‐APDs array

Abe

Inoue

Fujimoto

et al. 2016

Phys. Status Solidi C

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Recently, we have developed organic (PEDOT:PSS)–inorganic (ZnSSe) hybrid avalanche photodiode (APD) with long life time and its array. In this article, we review the development of the organic–inorganic hybrid‐type ZnSe‐based UV‐APDs array. We used PEDOT:PSS as UV transparent hole‐transport conducting polymer window layers formed by inkjet printing technique. We have successfully fabricated low dark current ultraviolet hybrid APDs. The hybrid APD device has exhibited very low voltage APD operation at 29 V and extremely low dark current of 10‐11 A/mm2 in the avalanche breakdownregion. The hybrid APD also has shown maximum multiplication factor of 45 and high sensitivity ∼ 3 A/W at the ultraviolet region (∼ 300 nm). A stable device operation is established using polyimide passivation and sealed package with N2 atmosphere. We also demonstrated integrated devices operation in APD mode with very small photosignal cross‐talk of ‐50 dB. The tail of current‐profile was determined as 8 μm by using in‐plane electron‐beam induced current (EBIC) measurement. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

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Development of ZnSe‐based organic–inorganic hybrid UV‐APDs array

Abe

Inoue

Fujimoto

et al. 2016

Phys. Status Solidi C

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“…1 Introduction Recently, problems associated with the exposure to the UV-A ray have been reconsidered. The realization of solid state visible blind UV-A sensors was studied using wide bandgap II-VI compound epitaxial layers [1][2][3]. The growth of ZnMgCdS quaternary alloy and ZnCdS/MgCdS superlattices, that exhibit a room-temperature band-gap corresponding to the UV-A region (about 3 eV) have been studied, and fabrication of UV-A sensors were performed [4,5].…”

mentioning

confidence: 99%

MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV‐A sensors

Ueno

Ogura

Ichiba

et al. 2006

Phys. Status Solidi (c)

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ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wavelength region; the ON-OFF ratio of sensor was about 10 3 for both structures. 1 Introduction Recently, problems associated with the exposure to the UV-A ray have been reconsidered. The realization of solid state visible blind UV-A sensors was studied using wide bandgap II-VI compound epitaxial layers [1][2][3]. The growth of ZnMgCdS quaternary alloy and ZnCdS/MgCdS superlattices, that exhibit a room-temperature band-gap corresponding to the UV-A region (about 3 eV) have been studied, and fabrication of UV-A sensors were performed [4,5]. ZnCdS/MgCdS superlattices that utilize quantum effects showed improved optical properties compared with ZnMgCdS thin films. In this study, ZnSe/MgCdS superlattices were explored for another UV-A sensor material. Estimating from the common cation-anion rule [6], only electrons could be confined in the conduction band quantum well for ZnCdS/MgCdS superlattices whereas both electrons and holes would be confined for ZnSe/MgCdS superlattice in quantum wells which were formed in both conduction band and valence bands. Consequently, ZnSe/ MgCdS superlattices would exhibit improved optical properties, such as sharper and intense photoluminescence (PL) compared with those from ZnCdS/MgCdS. ZnCdS/MgCdS superlattices, on the other hand, would exhibit higher sensitivity for light than ZnSe/MgCdS superlattices because the photo-absorption layer was consisted from S compounds. Since the effective bandgap would depend on periodic structures of superlattices, namely band offsets and effective masses of carriers, the design of the superlattice could include various structures even though the focused bandgap energy was identical. In order to obtain the high carrier confinement effect, bandgap energy of the MgCdS barrier layer should be high. High Mg content is required to expand the bandgap of MgCdS, then the degrada-

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“…The fabrication of visible blind UV-A sensors was extensively studied utilizing wide band gap II-VI compound epitaxial layers [1][2][3]. ZnMgCdS quaternary alloy is a II-II-II-VI compound which exhibits a room-temperature band-gap corresponding to the UV-A region (about 3 eV).…”

mentioning

confidence: 99%

MBE growth of ZnMgCdS compounds on (001) GaAs for UV‐A sensors

Enami

Tsutsumi

Hirose

et al. 2004

phys. stat. sol. (c)

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Zincblende ZnMgCdS quaternary alloy layers were grown by molecular beam epitaxy. The ZnMgCdS alloy could lattice match to GaAs and could exhibit the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Incorporation of Mg was more effective compared with Zn in the alloy. Stabilizing the substrate temperature especially at the initial growth stage was crucial to obtain high quality layers. The epilayer was applied to the metal-semiconductor-metal photodetector, and the rejection rate above 10 3 have bean achieved.1 Introduction Recently, problems associated with the exposure to the UV-A ray has been reconsidered. The fabrication of visible blind UV-A sensors was extensively studied utilizing wide band gap II-VI compound epitaxial layers [1][2][3]. ZnMgCdS quaternary alloy is a II-II-II-VI compound which exhibits a room-temperature band-gap corresponding to the UV-A region (about 3 eV). The controllability of the alloy composition would be fairly easy since sulfur is the only anion in the alloy. Lattice matching to GaAs could be achieved regardless of Mg, and the band-gap would be around 3 eV when the Mg mole fraction would be about 10%. Disadvantages of Mg compounds include its hydroscopic nature and rock salt crystal structures [4]; the small mole fraction of Mg in the alloy is a notable advantage from the device application point of view. In this study, the ZnMgCdS alloy films were grown by molecular beam epitaxy (MBE) on (001) GaAs substrates and metal-semiconductor-metal (MSM) device structures were fabricated. The MSM device structure was focused in this study since the valence control of the crystal, which would be difficult for this alloy, could be ignored. Spectral response of the photoconductivity was characterized under various bias conditions.

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Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors

Cited by 37 publications

References 7 publications

Development of ZnSe‐based organic–inorganic hybrid UV‐APDs array

Development of ZnSe‐based organic–inorganic hybrid UV‐APDs array

MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV‐A sensors

MBE growth of ZnMgCdS compounds on (001) GaAs for UV‐A sensors

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