Lasing in pure green region around 520 nm of InGaN based laser diodes (LDs) on semi-polar {202̄1} free-standing GaN substrates was demonstrated under pulsed operation at room temperature. The longest lasing wavelength reached to 531 nm and typical threshold current density was 8.2 kA/cm2 for 520 nm LDs. Utilization of a novel {202̄1} plane enabled a fabrication of homogeneous InGaN quantum wells (QWs) even at high In composition, which is exhibited with narrower spectral widths of spontaneous emission from LDs than those on other planes. The high quality InGaN QWs on the {202̄1} plane advanced the realization of the green LDs.

Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar f20 21g GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm 2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on f20 21g GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.

Both electrical conductivity σ and Seebeck coefficient S are functions of carrier concentration being correlated with each other, and the value of power factor S2σ is generally limited to less than 0.01 W m−1 K−2. Here we report that, under the temperature gradient applied simultaneously to both parallel and perpendicular directions of measurement, a metallic copper selenide, Cu2Se, shows two sign reversals and colossal values of S exceeding ±2 mV K−1 in a narrow temperature range, 340 K < T < 400 K, where a structure phase transition takes place. The metallic behavior of σ possessing larger magnitude exceeding 600 S cm−1 leads to a colossal value of S2σ = 2.3 W m–1 K–2. The small thermal conductivity less than 2 W m−1 K−1 results in a huge dimensionless figure of merit exceeding 400. This unusual behavior is brought about by the self-tuning carrier concentration effect in the low-temperature phase assisted by the high-temperature phase.

Continuous-wave operation of InGaN green laser diodes (LDs) on semipolar f2021g GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm is demonstrated. Wall plug efficiencies (WPEs) as high as 7.0-8.9% are realized in the wavelength range of 525-532 nm, which exceed those reported for c-plane LDs. The longest lasing wavelength has reached 536.6 nm under cw operation. These results suggest that the InGaN green LDs on the f20 21g plane are better suited as light sources for applications requiring wavelengths over 525 nm.

Green laser diodes (LDs) on the {2021} plane exhibit lower threshold current densities, nearly half of those on the c-plane in the green region between 520–530 nm. The threshold current of a typical {2021} green LD lasing at 525.5 nm under room temperature cw operation is 51.1 mA, which corresponds to a threshold current density of 4.3 kA/cm2. The threshold voltage is 6.38 V. The characteristics temperature T0 is measured to be 175 K. The perpendicular θ⊥ and parallel θ|| beam divergence angles at half power of the {2021} green LDs are 24 and 11°, respectively. From the viewpoint of the device characteristics, especially the threshold current density, we conclude that the green LDs on the {2021} plane GaN substrates have the essential advantage for obtaining efficient green LDs.