531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Enya, Yohei; Yoshizumi, Yusuke; Kikuchi, Takashi; Akita, Katsushi; Ueno, Masaki; Adachi, Masahiro; Sumitomo, Takamichi; Tokuyama, Shinji; Ikegami, Takatoshi; Kawasaki, Koji; Nakamura, Toshio

doi:10.1143/apex.2.082101

Cited by 371 publications

(350 citation statements)

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“…Besides, (1122) oriented films appear to be mostly smooth [9]. Effective long-wavelength emission of InGaN/GaN LEDs grown on the (2021) substrate and on the (2021) substrate has been reported in many papers (see, e.g., [17][18][19] and [20][21][22], respectively). However, taking into account aggregate results of the above analysis, we have decided to choose the (1122) InGaN/GaN LEDs.…”

Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 97%

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A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

2013

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Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantumconfined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (1122) crystallographic substrate orientation (inclination angle of 58 • to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to highquality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In 0.3 Ga 0.7 N/GaN QW LED grown on the semipolar (1122) substrate has been found as currently the optimal LED structure emitting green radiation.

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Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 97%

“…For lower inclination angles ϑ , i.e. for semi-polar orientations, the overlapping depends on a distance of ϑ from its value (about 34 • ) corresponding to [20,21,23,26,27,29,31] the same polarizations in both the quantum well and the barrier (Fig. 6).…”

Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 99%

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

2013

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“…Nevertheless, during the last few years the concentration of crystal defects was successfully reduced by improved bulk production processes [8 -10]. This improvement was mostly driven by optimization of optoelectronic applications [11,12] and by pushing GaN-based lasers toward the green spectral range [13][14][15][16][17]. Coherently, it enabled the first successful surface analysis experiments based on cleavage as surface preparation process [18 -26].…”

Section: Review@rrlmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…So far, all the semi-polar III-nitride laser structures have been grown exclusively on extremely expensive free-standing semi-polar GaN substrates. 1,8,9 Therefore, it implies that it is necessary to further improve the crystal quality of any overgrown (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)) GaN on sapphire in order to achieving lasing. In this paper, by carefully designing micro-rod templates used for our overgrowth, in particular, the diameter and height of the micro-rods used (two major parameters), we have achieved (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) semi-polar GaN with best crystal quality on sapphire, which has been systematically studied as a function of the micro-rod parameters by means of multiple characterization methods including photoluminescence (PL), transmission electron microscopy (TEM) and X-ray diffraction (XRD).…”

mentioning

confidence: 99%

Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates

Zhang

Bai

Hou

et al. 2016

Applied Physics Letters

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In order to realize semi-polar (11-22) GaN based laser diodes grown on sapphire, it is necessary to further improve the crystal quality of the (11-22) GaN obtained by using our overgrowth approach developed on regularly arrayed micro-rod templates [T. Wang, Semicond. Sci. Technol. 31, 093003 (2016)]. This can be achieved by carefully designing micro-rod templates. Based on transmission electron microscopy and photoluminescence measurements, it has been found that the micro-rod diameter plays a vital role in effectively reducing both the dislocation density and the basal staking fault (BSF) density of the overgrown (11-22) GaN, but in different manners. The BSF density reduces monotonically with increasing the micro-rod diameter from 2 to 5 μm, and then starts to be saturated when the micro-rod diameter further increases. In contrast, the dislocation density reduces significantly when the micro-rod diameter increases from 2 to 4 μm, and then starts to increase when the diameter further increases to 5 μm. Furthermore, employing shorter micro-rods is useful for removing additional BSFs, leading to further improvement in crystal quality. The results presented provide a very promising approach to eventually achieving (11-22) semi-polar III-nitride laser diodes.

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531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Cited by 371 publications

References 20 publications

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

Non‐polar group‐III nitride semiconductor surfaces

Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates

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