Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yoshizumi, Yusuke; Adachi, Masahiro; Enya, Yohei; Kikuchi, Takashi; Tokuyama, Shinji; Sumitomo, Takamichi; Akita, Katsushi; Ikegami, Takatoshi; Ueno, Masaki; Kawasaki, Koji; Nakamura, Toshio

doi:10.1143/apex.2.092101

Cited by 190 publications

(130 citation statements)

References 18 publications

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“…There is a limited number of reports on overgrowth of semi-polar GaN mainly based on conventional epitaxial lateral overgrowth (ELOG) [8][9][10][11][12][13] which generally leads to a non-uniformity issue and requests a thick overgrown layer (typically > 10 µm) in order to achieve an atomically flat surface. In order to address these issues, previously we reported an overgrowth approach based on self-organised nickel nano-masks, leading to a significant improvement in the crystal quality of either semi-or non-polar GaN on sapphire and achieving an atomically flat surface with an overgrown layer of only a few micrometers.…”

Section: Aip Advances 6 025201 (2016)mentioning

confidence: 99%

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

et al. 2016

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We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO2 mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

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Section: Aip Advances 6 025201 (2016)mentioning

confidence: 99%

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

et al. 2016

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“…Nevertheless, during the last few years the concentration of crystal defects was successfully reduced by improved bulk production processes [8 -10]. This improvement was mostly driven by optimization of optoelectronic applications [11,12] and by pushing GaN-based lasers toward the green spectral range [13][14][15][16][17]. Coherently, it enabled the first successful surface analysis experiments based on cleavage as surface preparation process [18 -26].…”

Section: Review@rrlmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Wurtzite InGaN quantum wells (QWs) are a very important gain medium for fabricating optoelectronic devices, such as near ultraviolet, blue, and green light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The growth of InGaN QWs along the [0001] direction leads to a QW system with a very strong quantum confined Stark effect due to the large internal electric fields which result from discontinuities in spontaneous and piezoelectric polarization at QW heterointerfaces [15,16].…”

Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

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Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Cited by 190 publications

References 18 publications

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

Non‐polar group‐III nitride semiconductor surfaces

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

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