It has been shown that phase-locked cavities have a quantised transfer function (Jennison 1979) and that they account for the property of inertia (Jennison and Drinkwater 1977). The analysis in this paper shows that only half of the rest energy of a phase-locked cavity contributes actively to the inertial force. The moment of inertia of such a system about its own axis is only half that of a classical rigid body of the same total rest mass distributed in the same region of space. If a phase-locked cavity is used as a model of a fundamental particle then it is concluded that the particle is a fermion with a rest mass corresponding to its total rest energy.
PACS 73.61. Jc, 78.30.Ly, 78.66.Jg, 81.05.Gc B, P or Sb were doped into amorphous silicon films by the reactive radio-frequency co-sputtering method. The targets used were composed of silicon wafers and small about 1 mm thick chips of the respective impurity element, which were attached to the silicon wafers with silver powder cement and epoxy resins. Argon and hydrogen partial pressures used were 5 × 10 −3 and 5 × 10 −4 torr, respectively. The impurity concentration in the film was determined by secondary ion mass spectroscopy for B and P and by He backscattering spectroscopy for Sb. The substrates were kept at 200 -250 °C during deposition. Raman spectra revealed that films prepared even at 250 °C were amorphous. Heterostructures, where P-, Sb-or B-doped films were deposited on p-or n-type Si, exhibited good rectification characteristics of p -n diodes. It has been shown that the co-sputtering method can produce low-resistivity p-type (B) and n-type (P) a-Si : H films for relatively low concentrations of B and P, respectively.
Shallow donors have been created in Si by protons, H 2+ and H 3+ bombardment at room temperature followed by annealing above 300°C. The electron concentration profiles due to the shallow donors in the bombarded n‐type region of the p+–n junction are determined by the Copeland method. The depth of the concentration peaks is 1 μm for every 100 kV for several hundred kV proton accelerating voltage, and a half and a third of the depth due to protons for H2+ and H3+ ions, respectively. These shallow donors disappear as the annealing temperature exceeds 700°C. For samples, bombarded at 300 °K but not annealed, only deep electron traps are observed. Most traps are annealed out above 300°C, by which the shallow donors emerge.
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