Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors

Ohmura, Y.; Zohta, Yasuhito; Kanazawa, M.

doi:10.1016/0038-1098(72)91173-8

Cited by 81 publications

(18 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So far, the common explanation for this behavior, as given by Ohmura et al, 1 is that a shallow donor is the result of a hydrogen ion located in an interstitial hole. The shallow donors induced by proton implantation in n-type silicon have stimulated a great deal of interest in microelectronic processes, which in many cases, can have an advantageous effect.…”

Section: Introductionmentioning

confidence: 91%

Evolution of shallow donors with proton fluence in n-type silicon

Ntsoenzok

Desgardin

Saillard

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 91%

Evolution of shallow donors with proton fluence in n-type silicon

Ntsoenzok

Desgardin

Saillard

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The formation of H-related shallow donors is another important phenomenon. It was found for the first time that the shallow donors can be produced in proton (H + )-implanted Si annealed over a temperature range of 300-500 • C with a donor ionization energy of about 26 meV, and disappear at 600 • C. 8) Thereafter, the excess shallow donors of high concentration have also been observed in neutron-irradiated FZ Si:H 2 at annealing temperatures ranging from 400-500 • C. 9,10) This phenomenon is very different from that of other crystalline Si without hydrogen, for example, FZ Si:Ar. Therefore, the donors are often called hydrogen-related donors.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-Defect Shallow Donors in Si

Kang

Bai

2001

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The influence of different original Si crystals and neutron fluence on the formation of hydrogen-defect shallow donors in neutron-irradiated floating-zone silicon grown in hydrogen atmosphere (FZ Si:H 2 ) is studied. The annealing behavior of neutron-irradiated floating-zone silicon grown in argon atmosphere (FZ Si:Ar), neutron-irradiated FZ Si:H 2 kept for three years at room temperature (RT) and only fast-neutron-irradiated FZ Si:H 2 reveals that shallow donors are directly related to hydrogen and defects, especially to thermal-neutron-radiation point defects. The maximum concentration of the shallow donors approaches to a stable value with an increase in neutron fluence. Some characteristics of the shallow donors are discussed.

show abstract

“…Irradiation of crystalline silicon with protons in the energy range of keV to MeV and successive annealing at temperatures up to 500 °C induces shallow donor type defects [3,4] with ionization energies of several 10 meV [5][6][7]. Previous investigations have shown that various different energy levels exist, depending on the temperature of the annealing step [6,8].…”

Section: Introductionmentioning

confidence: 99%

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Laven

Schulze²,

Häublein

et al. 2011

AIP Conference Proceedings

View full text Add to dashboard Cite

Composition change of stainless steel during microjoining with short laser pulse J. Appl. Phys. 96, 4547 (2004) Elemental surface analysis at ambient pressure by electron-induced x-ray fluorescence Rev. Sci. Instrum. 74, 1251 (2003 Nondestructive analysis of ultrashallow junctions using thermal wave technology Rev. Sci. Instrum. 74, 586 (2003) Images of dopant profiles in low-energy scanning transmission electron microscopy Appl. Phys. Lett. 81, 4535 (2002) Spreading-resistance profiling of silicon and germanium at variable temperature J. Appl. Phys. 92, 4809 (2002) Additional information on AIP Conf. Proc. Abstract. The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen-related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 10 14 cm -2 , the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 10 14 cm -2 , however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature dependent model using two donor species is proposed which accounts for the different dose dependencies at the different annealing temperatures.

show abstract

Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors

Cited by 81 publications

References 6 publications

Evolution of shallow donors with proton fluence in n-type silicon

Evolution of shallow donors with proton fluence in n-type silicon

Hydrogen-Defect Shallow Donors in Si

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Contact Info

Product

Resources

About