Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Abstract

Composition change of stainless steel during microjoining with short laser pulse J. Appl. Phys. 96, 4547 (2004) Elemental surface analysis at ambient pressure by electron-induced x-ray fluorescence Rev. Sci. Instrum. 74, 1251 (2003 Nondestructive analysis of ultrashallow junctions using thermal wave technology Rev. Sci. Instrum. 74, 586 (2003) Images of dopant profiles in low-energy scanning transmission electron microscopy Appl. Phys. Lett. 81, 4535 (2002) Spreading-resistance profiling of silicon and germanium at variable temperature J. Appl. Phys. 92, 4809 (2002) Additional information on AIP Conf. Proc. Abstract. The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen-related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 10 14 cm -2 , the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 10 14 cm -2 , however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature dependent model using two donor species is proposed which accounts for the different dose dependencies at the different annealing temperatures.

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

“…The concentration of the donor species HD1 is known to increase about linearly with the proton fluence, while the species HD2 exhibits a square root dependence on the proton fluence. 19 Thus, the relative concentration of the two species is also dependent on the implantation parameters. The principal dependence of the charge-carrier concentration on the annealing temperature are known from recent publications.…”

“…7 These oxygen-related donors, however, show a clearly different annealing behavior from the investigated HDs and may, thus, be separated from the HDs in the present annealing studies. 19 For the diffusion study in the first part of the paper, only FZ samples were used.…”

“…The HD concentration depends linearly on the proton fluence for successive anneals at temperatures around 350 • C, whereas after annealing at temperatures around 470 • C a square-root dependence of the HD concentration on the fluence is observed. 19,20 This behavior may be explained qualitatively by the appearance of two different types of HDs in the proton-implanted samples. These two species each exhibit a different proportionality to the implanted proton fluence.…”

(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation

“…The initial concentration of the less stable donor species HD1 surpasses that of the more stable species HD2 in this case. The concentration of the donor species HD1 is known to increase about linearly with the proton fluence, while the species HD2 exhibits a square root dependence on the proton fluence (15). Thus, the relative concentration of the two species is also dependent on the implantation parameters.…”

“…The concentration of the proton-induced HDs using fluences between 3×10 13 cm -2 and about 1×10 15 cm -2 is a non-trivial function of the proton fluence and the annealing temperature. The HD concentration depends linearly on the proton fluence for successive anneals at temperatures around 350 °C, whereas after annealing at temperatures around 470 °C a square-root dependence of the HD concentration on the fluence is observed (15,16). This behavior may be explained qualitatively by the appearance of two different types of HDs in the proton-implanted samples.…”