Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc

Okamoto, Kotaro; Mawatari, H.; Yamaguchi, Kôichi; Noguchi, Akihiro

doi:10.1016/0022-0248(89)90299-6

Cited by 19 publications

(10 citation statements)

References 15 publications

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“…Making devices requires multi-layer structures which consist of doped and undoped layers. As a p-type dopant the elements Zn [1][2][3][4], Mg [5][6][7], Be [8,9], Cd [10] and C [11][12][13] have been employed in MOCVD. Among these elements, zinc is the one most widely used in MOCVD growth of GaAs and AIGaAs.…”

Section: Introductionmentioning

confidence: 99%

“…Although the diffusion coefficient of zinc in these III/V semiconductors is rather high [14][15][16], zinc is preferred by most users because the zinc precursors can be handled very easily and it has a wide doping range (10 16 _10 20 cm- 3 ). The most commonly used zinc precursor in MOCVD is diethylzinc (DEZn).…”

Section: Introductionmentioning

confidence: 99%

“…In the literature, a considerable number of studies on zinc doping of GaAs have been pub-li shed [1][2][3][4]12,[17][18][19][20][21][22][23][24], in contra st to the relatively small amount of work on the p-type doping of AlGaAs with zinc [25]. When the ho le concentration is plotted versus the input mole fraction DEZn on a log-log plot, in most cases a linear relation has been reported [1,2, with si opes varying between 004 and lA, although also nonlinear relations have been obtained [2,21,22].…”

Section: Introductionmentioning

confidence: 99%

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Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Hageman

Croon

Tang

et al. 1993

Journal of Crystal Growth

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Zinc doping of MOCVD grown GaAs and AlGaAs using diethylzinc (DEZn) as precursor has been studied as a function of the zinc input mole fraction, growth temperature, aluminum fraction of the AIGaAs alloy and total reactor pressure. The experiments have been performed in two different reactors which differ in pressure and tempe rature distributions. We have found that the zinc incorporation follows a Iinear behaviour in a log-log plot of hole concentration versus zinc input mole fraction with a slope of 1 and that the incorporation of zinc is independent of the fraction Al in AlxGaJ_xAs up to x = 0.45. The zinc incorporation decreased with increasing growth tempe rature following an Arrhenius type of behaviour for both GaAs and AlGaAs. This tempe rature behaviour did not change when the reactor pressure was lowered. Ali experimental results can be explained satisfactorily by a model which takes into account that the incorporation of zinc is preluded by an adsorption-desorption equilibrium of zinc at the step of the growing crystal.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Hageman

Croon

Tang

et al. 1993

Journal of Crystal Growth

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“…Equations ͑30͒-͑32͒ indicate that the hole concentration is not a simple function of DEZ pressure, TMG pressure, AsH 3 pressure, or temperature. 26,27 Figure 11 shows the hole concentration as a function of DEZ/TMG ratio. 26 It is obvious from Eq.…”

Section: ͑30͒mentioning

confidence: 99%

“…26,27 Figure 11 shows the hole concentration as a function of DEZ/TMG ratio. 26 It is obvious from Eq. ͑30͒ that the hole concentration will saturate at high DEZ pressures.…”

Section: ͑30͒mentioning

confidence: 99%

A kinetic model for metalorganic chemical vapor deposition from trimethylgallium and arsine

Tao

2000

Journal of Applied Physics

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A kinetic model based on the collision theory of chemical reactions is proposed for gallium arsenide (GaAs) metalorganic chemical vapor deposition from trimethylgallium and arsine. A simplified reaction mechanism is incorporated into the model, which includes four heterogeneous deposition reactions: Ga-containing and As-containing species with Ga and As sites, as well as carbon incorporation reactions. An equation for the overall growth rate of the four deposition reactions is derived, which is simplified under the Ga-rich or As-rich growth condition. A discussion about antisite defects leads to the conclusion that As-rich growth produces stoichiometric GaAs. The relation between temperature and arsine/trimethylgallium ratio for As-rich growth is defined. The concept of competitive adsorption is introduced to understand doping and ternary deposition. Carrier concentration for n-type, p-type, and amphoteric doping as a function of deposition conditions is derived. Conversion from p type to n type with arsine/trimethylgallium ratio due to residual carbon is, for the first time, quantitatively explained within the framework of doping. Film composition as a function of deposition conditions in ternary deposition of aluminum–gallium arsenide (Al1−xGaxAs) and gallium arsenide–phosphide (GaAs1−yPy) is also derived. The distributions of Al and P between gas phase and solid film follow the same physics rule but differ in the nature of impinging species. The quantitative agreement between the model and a wide range of experiments demonstrates the value of this model.

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