Magnetic field effects on cylindrical magnetron reactive ion etching of Si/SiO2 in CF4 and CF4/H2 plasmas J. Vac. Sci. Technol. A 7, 987 (1989); 10.1116/1.575788Xray photoemission spectroscopy characterization of silicon surfaces after CF4/H2 magnetron ion etching: Comparisons to reactive ion etching
Insulating films on the GaAs(100) surface for use as passivating layers or in MIS structures pose a special problem because of a lack of a stable native oxide and also because of difficulties associated with the preparation of a clean, stoichiometric GaAs(lOO) surface in the absence of Ga or As vapor sources. Group II fluorides (CaF2, BaF2, SrF2, and CdF2) are good insulators at or below room temperature, and their cubic fluorite structure makes them good candidates for epitaxy on the cubic GaAs(100) surface. The close structural match between CaF2 and GaAs (3.2% lattice mismatch) makes this combination especially attractive for epitaxy studies. We report the first epitaxial growth of CaF2 on a GaAs(100) substrate that was cleaned under UHV conditions by ion–heat treatment. The depositions were carried out at pressures in the range of 10−9 Torr with a specially designed evaporator supplying the CaF2 molecules. In situ AES and LEED were used for the characterization of the structure and composition of the substrate and the film. The CaF2 films were characterized ex situ by RHEED and optical microscopy. High quality epitaxial films were obtained at substrate temperatures of 500–600 °C.
Damage produced in single-crystal silicon by two distinctly different dry etching techniques, Ar ion beam etching and CCl4 reactive ion etching is characterized and compared using spectroscopic ellipsometry, reflected high- energy electron diffraction, and current-voltage (I-V) characteristics of Au contacts to the etched Si. Secondary ion mass spectroscopy is also used to further characterize the CCl4 exposed samples. The effectiveness of low-energy hydrogen ion implants in passivating this dry etching induced damage is explored. The restoration of I-V characteristics caused by H+ implants is correlated with the evolution of the spectroscopic ellipsometry, reflected high- energy electron diffraction, and secondary ion mass spectroscopy data.
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