Epitaxial growth of CaF2 on GaAs(100)

Sinharoy, S.; Hoffman, R. A.; Rieger, J.; Farrow, R. F. C.; Noreika, A. J.

doi:10.1116/1.573327

Cited by 36 publications

(8 citation statements)

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“…We could, however, show that under ''pure'' (UHV) conditions a polished (1 0 0) surface develops growth pyramids with {1 1 1} faces so that a formation of {1 0 0} growth faces should not occur under vapor growth. This is in accordance with results for the epitaxial growth of CaF 2 on (1 0 0) surfaces of different substrates [38][39][40][41]. The occurrence of (1 0 0) faces under natural conditions should be connected with an interaction with the solvent, that is with water, or with the formation of water complexes at the surface [34].…”

Section: Introductionsupporting

confidence: 86%

Studies of the growth kinetics of CaF2(111) by molecular beam methods and atomic force microscopy

2005

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Section: Introductionsupporting

confidence: 86%

Studies of the growth kinetics of CaF2(111) by molecular beam methods and atomic force microscopy

2005

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“…The GaAs(100) substrates were cleaned by thermal desorption of the surface oxide followed by a repetitive sputter-anneal process. 4 The GaAs is important because it provides Ga and As 3d photoemission lines which act as internal intensity references for the CaF2 photoelectron spectra.…”

Section: Nature Of Core-electron Excited States In Caf2 Determined Bymentioning

confidence: 99%

Nature of core-electron excited states in CaF_{2} determined by high-resolution absorption and electron-emission studies

et al. 1990

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Combining high-resolution absorption and electron-emission spectra for CaF2, we have investigated the nature of the electronic transitions near the Ca L edge and the F K edge. The presence or absence of spectator and participator lines in the Auger decay of the core-hole excited states is direct spectroscopic evidence which enables us to infer whether or not the final state in the absorption transition is a bound state. Additionally we obtain information about the location of the excited-state electron relative to the ion cores.PACS numbers: 78.70.Dm X-ray-absorption spectra in the vicinity of absorption edges are known to be rich in chemical and structural information if they can be interpreted. The importance of absorption spectroscopy as a spectroscopic tool will increase as the resolution and intensity of the tunable sources that are available in the vacuum-ultraviolet and x-ray region improves.' In this paper we show, with reference to CaF2, that the electron-emission spectra which result from resonant excitation of individual absorption lines (deexcitation spectra) provide new information that is useful in the interpretation of absorption spectra in solids.The absorption in CaF2 near the fluorine K edge and Ca L edge have been studied extensively in thin films of CaF2 deposited on silicon. 2,3 The measurements reported in this paper were carried out on CaF2 films about 30 A thick deposited by evaporation on clean GaAs. Based on photoemission and electron-yield measurements as a function of film thickness we conclude that the CaF2 grows uniformly on the surface and that the films are representative of bulk material. The GaAs(100) substrates were cleaned by thermal desorption of the surface oxide followed by a repetitive sputter-anneal process. 4

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“…However, so far, the homoepitaxial growth of RE 3+ -doped CaF2 films has not been deeply studied. In the early studies, undoped CaF2 films were grown on semiconducting substrates (e.g., (100) or (111) oriented Si (mainly), GaAs or InP) by molecular beam epitaxy (MBE) [23][24][25]. The selection of silicon was because of the relatively close lattice constants of Si and CaF2, so that the latter was used as a buffer layer for further deposition steps.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopy of Tm3+-doped CaF2 waveguiding thin films grown by Liquid Phase Epitaxy

Loiko

Brasse

Basyrova

et al. 2021

Journal of Luminescence

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Thulium-doped calcium fluoride (Tm:CaF2) single-crystalline films are grown on (100)-oriented undoped bulk CaF2 substrates by Liquid Phase Epitaxy (LPE) using LiF as a solvent. Their spectroscopic properties are studied in details. For ~2 at.% Tm-doped films, the active ions are predominantly isolated and are located in oxygen-assisted trigonal sites, C3v(T2). With increasing the Tm doping level, ion clustering is promoted but it is slowed down as compared to bulk crystals. For ~6 at.% Tm-doped films, the majority of active ions form clusters resulting in a "glassy-like" spectroscopic behavior (smooth and broad spectral bands). For such layers, the maximum stimulated-emission cross-section for the 3 F4 → 3 H6 transition is 0.14×10 -20 cm 2 at 1856 nm, the luminescence lifetime of the 3 F4 state is 21.70 ms and the emission bandwidth exceeds 180 nm. The transition probabilities of Tm 3+ ions are determined using the Judd-Ofelt theory. The waveguiding properties of the Tm:CaF2 films are confirmed. Highly-doped Tm:CaF2 epitaxial films are promising for waveguide lasers at ~2 μm.

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Epitaxial growth of CaF2 on GaAs(100)

Cited by 36 publications

References 0 publications

Studies of the growth kinetics of CaF2(111) by molecular beam methods and atomic force microscopy

Studies of the growth kinetics of CaF2(111) by molecular beam methods and atomic force microscopy

Nature of core-electron excited states in CaF_{2} determined by high-resolution absorption and electron-emission studies

Spectroscopy of Tm3+-doped CaF2 waveguiding thin films grown by Liquid Phase Epitaxy

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