Fabrication of AlGaInAs and GaInAsP buried heterostructure lasers by in situ etching

Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride

“…This is in agreement with results already reported for Al alloys [6,13]. In particular, a wet chemical etch was needed before ISE by TBCl in the fabrication of AlGaInAs buried heterostructure lasers [14].…”

“…This behaviour has already been reported for planar structures [10,14]. In that case the addition of a small amount of TMGa during the etching was key to a great improvement of the surface quality and, in particular, in solving the problem of the trench development.…”

“…4b). A possible explanation of trench elimination was related to an enhanced desorption of etching products from the surface and transport to the vapour phase [14]. In our opinion this is not the principal effect.…”

In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

“…Etching proceeds in the growth chamber just prior to regrowth, so the crystal quality of the regrown layer is improved because of the lack of contaminants and oxides conventionally originated from the regrown surface. Since present opto-electronic devices for telecom applications are made of InP-based materials, in situ etching for these materials by using various etching gases, such as HCl [1][2][3][4], tertiarybutylchloride (TBCl) [5][6][7], PCl 3 [8,9], and ethylene [10], has been reported. Furthermore, InGaAsP multiple-quantum-well (MQW) laser diodes (LDs), whose mesa stripes were formed by in situ etching, have already been fabricated [5][6][7]11].…”

In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

“…On the other hand, to improve the crystalline quality of the regrowth interface, in-situ gas etching in a growth chamber has been investigated [3][4][5][6][7][8][9][10]. Two methods for in-situ gas etching have been reported.…”