In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor

In situ etching for total control over axial and radial nanowire growth

“…2(b)). This indicates that HCl reacts even at these low temperatures with one or several In-based species (TMI, dimethylindium, monomethylindium, and In) and InP, to form InCl, as reported for in situ selective area etching [19,20]. The use of HCl during NW growth makes the process both more complexpossibly involving pre-reactions and depletion of In species -and dynamic, with competing adsorption (growth) and desorption (etching) of growth species.…”

“…We show here that in situ etching by use of HCl [19,20] can prevent radial growth, despite growth conditions which would otherwise lead to strong tapering. This allows total control over the design and growth of axially defined NW materials.…”

Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride

“…The result is a higher energy needed for etching the semiconductor and a decrease of r E . Kitatani et al [20] reported an analogous mechanism, where formation of As or Ga related products such as InAs, GaAs and GaP dots was observed during the PH 3 -assisted InGaAsP etching by HCl. The same behaviour was already reported by our group [2] in the etching of InGaAsP MQW structures.…”

Etching effect of tertiary-butyl chloride during InP-nanowire growth

“…HCl etching in the metalorganic chemical vapor deposition (MOCVD) system has long been investigated for in-situ selective etching prior to regrowth as one step in the device fabrication process [15][16][17]. In-situ gas etching during NW growth was first demonstrated using HCl by Borgström et al, who have shown its effectiveness for reducing VS growth at the sidewalls [18].…”