In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride

“…In that case the r E of GaAs was higher than that of AlAs and this was attributed to Al-chloride species, as AlCl x where x ¼ 122, formed during the etching, supposed by thermodynamical calculations and confirmed by laser reflectometry technique. The same assumption was reported for ISE by HCl of InGaAlAs where r E decreased as Al content increased, due to the low volatility of AlCl 3 produced in the etching [16].…”

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

“…The reduction of α is considered to be the result of the difference in isotropic etching regarding the reactivity between chloride gas and the ratio of the aluminum (or/and indium) component of the etched semiconductor. 27) As distinct evidence of this reactivity, the increase in etching rate with pressure simultaneously contributes to an improved surface morphology; e.g., the etched semiconductor becomes smoother, as reported for InAlAs elsewhere. 28) Meanwhile, in the etching process of the epitaxial layer, the diameter reduction of D x can be strongly related to mask shapes with larger α (of both SiO 2 and resist) at a lower chamber pressure.…”

In Situ HCl Etching of InP in Shallow-Trench-Isolated Structures

“…For topological reasons, in SAG, the InP surface needs to be recessed back to a certain depth corresponding to the thickness of the III-V quantum well channel layer stack. Whereas routinely wet chemical and dry etching techniques are used for layer etching, recently vapor etch processes with HCl have been explored [7,8]. In-situ etching in the MOCVD reactor used for epitaxial growth has several advantages compared to exsitu etching: it leaves the etched surface free of contaminants and native oxides, and as such provides the best conditions for the subsequent epitaxial growth.…”

“…In-situ etching studies of InP-based alloys using metal organic vapor phase epitaxy (MOVPE) were reported for opto-electronic applications, mostly by means of halogenbased etching agents: HCl [7][8][9], tertiarybutylchloride [10,11], various chlorocarbons [12], CBr 4 [13], PCl 3 [14]. Recently, Selective Area Etching (SAE) of InP open areas between two closely spaced silicon dioxide pads was also investigated [13,14]: bulk InP (100) wafers patterned with 1000 µm long silicon dioxide pad pairs and with width varying from 10 to 60 µm were chosen as the substrate and the etch rate dependence on various process parameters as well as on pad width was assessed.…”